TY - JOUR
T1 - Erratum to: Design and theoretical comparison of input ESD devices in 180 nm CMOS with focus on low capacitance (e & i Elektrotechnik und Informationstechnik, (2018), 135, 1, (69-75), 10.1007/s00502-017-0569-0)
AU - Michalowska-Forsyth, Alicja
AU - Schrey, Patrick
AU - Deutschmann, Bernd
PY - 2019
Y1 - 2019
N2 - Erratum to: Elektrotechnik & Informationstechnik (2018) 135/1: 69–75https://doi.org/10.1007/s00502-017-0569-0 Following Acknowledgement was missing: The financial support of the presented research work by the Austrian Science Fund (FWF) under the project number T 756-N20 is gratefully acknowledged.
AB - Erratum to: Elektrotechnik & Informationstechnik (2018) 135/1: 69–75https://doi.org/10.1007/s00502-017-0569-0 Following Acknowledgement was missing: The financial support of the presented research work by the Austrian Science Fund (FWF) under the project number T 756-N20 is gratefully acknowledged.
UR - http://www.scopus.com/inward/record.url?scp=85054791777&partnerID=8YFLogxK
U2 - 10.1007/s00502-018-0648-x
DO - 10.1007/s00502-018-0648-x
M3 - Article
AN - SCOPUS:85054791777
SN - 0932-383X
VL - 136
SP - 224
JO - Elektrotechnik und Informationstechnik
JF - Elektrotechnik und Informationstechnik
IS - 2
ER -