@inproceedings{43459212f59245a69162368f32ddace3,
title = "Evidence for an abrupt transition between SiO2 and SiC from eels and Ab initio modelling",
abstract = "Electron energy loss spectroscopy (EELS) and ab initio simulations are combined in this study to produce an atomistic interpretation of the interface morphology in lateral 4H-SiC / SiO2 MOSFETs with deposited gate oxides. This allows the question of interface abruptness, and the presence the postulated SiOxCy interlayer to be explored for a subset of devices with deposited oxides. From comparison between EELS and ab initio calculation the interfaces considered are best described as abrupt, but stepped, transitioning without any of the carbon excess or SiOxCy interlayer that have been described for other devices observed.",
keywords = "Core-loss simulation, Density functional theory (DFT), Electron energy loss spectroscopy (EELS), Gate oxide, Interface characterization, Transmission electron microscopy (TEM)",
author = "Jonathon Cottom and Mistry, {Manesh V.} and Gernot Gruber and Gregor Pobegen and Thomas Aichinger and Shluger, {Alexander L.}",
year = "2019",
month = jan,
day = "1",
doi = "10.4028/www.scientific.net/MSF.963.199",
language = "English",
isbn = "9783035713329",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd.",
pages = "199--203",
editor = "Gammon, {Peter M.} and Shah, {Vishal A.} and McMahon, {Richard A.} and Jennings, {Michael R.} and Oliver Vavasour and Mawby, {Philip A.} and Faye Padfield",
booktitle = "Silicon Carbide and Related Materials, 2018",
note = "12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 ; Conference date: 02-09-2018 Through 06-09-2018",
}