Abstract
The growth kinetics of Al-Cu intermetallic compounds (IMC) have been investigated on thin film couples and bonded samples in the range 150°C to 250°C using XRD, SEM/EDX and in-situ interface resistance monitoring. Individual diffusion constants D o and activation energies E a (1.01eV, 0.97eV, 1.23eV, 1.28eV) have been obtained from thin film couples for the main three IMC phases Al 4 Cu 9 , AlCu and Al 2 Cu, and for the total IMC growth, respectively. Two additional phases (Al 3 Cu 2 , Al 0.06 Cu 0.94 ) contribute to the total IMC growth at T ≥ 200°C, but do not form at lower temperatures. Lower activation energies of 1.13eV (thin film) and 1.05eV (bonded samples) have thus been derived for T
Originalsprache | englisch |
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Titel | 2014 IEEE International Interconnect Technology Conference |
Seiten | 109-112 |
DOIs | |
Publikationsstatus | Veröffentlicht - 2014 |
Veranstaltung | 2014 IEEE International Interconnect Technology Conference: IITC 2014 - San Jose, USA / Vereinigte Staaten Dauer: 20 Mai 2014 → 23 Mai 2014 |
Konferenz
Konferenz | 2014 IEEE International Interconnect Technology Conference |
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Kurztitel | IITC 2014 |
Land/Gebiet | USA / Vereinigte Staaten |
Ort | San Jose |
Zeitraum | 20/05/14 → 23/05/14 |
Fields of Expertise
- Advanced Materials Science
Treatment code (Nähere Zuordnung)
- Basic - Fundamental (Grundlagenforschung)