@inproceedings{e72a31c20602408ebad08b29b8691716,
title = "Influence of oxide processing on the defects at the SiC-SiO2 interface measured by electrically detected magnetic resonance",
abstract = "Anneals in nitrogen (N) containing atmosphere have been proven as efficient means of improving the channel mobility of SiC MOSFETs. It has been demonstrated that simultaneously the density of interface traps is reduced. However, this process is not yet fully understood. In this study we show a comparison of MOSFETs annealed in different atmospheres and compare their electrically detected magnetic resonance (EDMR) spectra with electrical parameters. We find hints for the N incorporation not only passivating but also creating or transforming defects.",
keywords = "Annealing, EDMR, Interface defects, MOSFET, Nitrogen, Passivation, SiC",
author = "Gernot Gruber and Thomas Aichinger and Gregor Pobegen and Dethard Peters and Markus Koch and Peter Hadley",
year = "2016",
doi = "10.4028/www.scientific.net/MSF.858.643",
language = "English",
isbn = "9783035710427",
volume = "858",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd.",
pages = "643--646",
booktitle = "Silicon Carbide and Related Materials 2015",
note = "16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 ; Conference date: 04-10-2015 Through 09-10-2015",
}