Multiscale approach to the electronic structure of doped semiconductor surfaces

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@article{a36c63db5c1e49f781fbefaff90eef03,

title = "Multiscale approach to the electronic structure of doped semiconductor surfaces",

author = "Oliver Hofmann",

year = "2015",

doi = "http://dx.doi.org/10.1103/PhysRevB.91.075311",

language = "English",

pages = "075311--1--075311--16",

journal = "Physical Review B",

issn = "2469-9969",

publisher = "American Physical Society",

}

TY - JOUR

T1 - Multiscale approach to the electronic structure of doped semiconductor surfaces

AU - Hofmann, Oliver

PY - 2015

Y1 - 2015

UR - http://journals.aps.org/prb/abstract/10.1103/PhysRevB.91.075311

U2 - http://dx.doi.org/10.1103/PhysRevB.91.075311

DO - http://dx.doi.org/10.1103/PhysRevB.91.075311

M3 - Article

SN - 2469-9969

SN - 1550-235X

SP - 075311-1-075311-16

JO - Physical Review B

JF - Physical Review B

ER -