Photocharge-modulated passive intermodulation on AgO/Ag junction in high-power microwave devices

Xiong Chen; Yongning He; David J. Pommerenke; Jun Fan

doi:10.1109/LMWC.2020.2971829

Photocharge-modulated passive intermodulation on AgO/Ag junction in high-power microwave devices

Xiong Chen^*, Yongning He, David J. Pommerenke, Jun Fan

^*Korrespondierende/r Autor/-in für diese Arbeit

Institut für Elektronik (4390)

Publikation: Beitrag in einer Fachzeitschrift › Artikel › Begutachtung

Abstract

This letter studies the photocharge-modulated passive intermodulation (PIM) effect on the Ag₂O/Ag contact junction. It is demonstrated that the photocharge with the parasitic parameters on the contact junction can modulate the electron transport process and make the PIM components changed with photoillumination. The linear RC constant can change the nonlinear current strength, under the periodical photostimulation, and PIM components will vary with the photopulses. In the experiment, by using a specially designed coaxial fixture to measure the PIM response with RC components on the contact junction, a semianalytical model for this photoeffect-modulated contact PIM is demonstrated.

Originalsprache	englisch
Aufsatznummer	9001207
Seiten (von - bis)	268-271
Seitenumfang	4
Fachzeitschrift	IEEE Microwave and Wireless Components Letters
Jahrgang	30
Ausgabenummer	3
DOIs	https://doi.org/10.1109/LMWC.2020.2971829
Publikationsstatus	Veröffentlicht - 1 März 2020

ASJC Scopus subject areas

Physik der kondensierten Materie
Elektrotechnik und Elektronik

Zugriff auf Dokument

10.1109/LMWC.2020.2971829

Andere Dateien und Links

http://www.scopus.com/inward/record.url?scp=85081736866&partnerID=8YFLogxK

Dieses zitieren

@article{f0d9cf7cdb4d4398a6bb1173e6789e4b,

title = "Photocharge-modulated passive intermodulation on AgO/Ag junction in high-power microwave devices",

abstract = "This letter studies the photocharge-modulated passive intermodulation (PIM) effect on the Ag2O/Ag contact junction. It is demonstrated that the photocharge with the parasitic parameters on the contact junction can modulate the electron transport process and make the PIM components changed with photoillumination. The linear RC constant can change the nonlinear current strength, under the periodical photostimulation, and PIM components will vary with the photopulses. In the experiment, by using a specially designed coaxial fixture to measure the PIM response with RC components on the contact junction, a semianalytical model for this photoeffect-modulated contact PIM is demonstrated.",

keywords = "Contact nonlinearity, passive intermodulation (PIM), photocharge modulation, silver oxide",

author = "Xiong Chen and Yongning He and Pommerenke, {David J.} and Jun Fan",

year = "2020",

month = mar,

day = "1",

doi = "10.1109/LMWC.2020.2971829",

language = "English",

volume = "30",

pages = "268--271",

journal = "IEEE Microwave and Wireless Components Letters",

issn = "1531-1309",

publisher = "Institute of Electrical and Electronics Engineers",

number = "3",

}

TY - JOUR

T1 - Photocharge-modulated passive intermodulation on AgO/Ag junction in high-power microwave devices

AU - Chen, Xiong

AU - He, Yongning

AU - Pommerenke, David J.

AU - Fan, Jun

PY - 2020/3/1

Y1 - 2020/3/1

N2 - This letter studies the photocharge-modulated passive intermodulation (PIM) effect on the Ag2O/Ag contact junction. It is demonstrated that the photocharge with the parasitic parameters on the contact junction can modulate the electron transport process and make the PIM components changed with photoillumination. The linear RC constant can change the nonlinear current strength, under the periodical photostimulation, and PIM components will vary with the photopulses. In the experiment, by using a specially designed coaxial fixture to measure the PIM response with RC components on the contact junction, a semianalytical model for this photoeffect-modulated contact PIM is demonstrated.

AB - This letter studies the photocharge-modulated passive intermodulation (PIM) effect on the Ag2O/Ag contact junction. It is demonstrated that the photocharge with the parasitic parameters on the contact junction can modulate the electron transport process and make the PIM components changed with photoillumination. The linear RC constant can change the nonlinear current strength, under the periodical photostimulation, and PIM components will vary with the photopulses. In the experiment, by using a specially designed coaxial fixture to measure the PIM response with RC components on the contact junction, a semianalytical model for this photoeffect-modulated contact PIM is demonstrated.

KW - Contact nonlinearity

KW - passive intermodulation (PIM)

KW - photocharge modulation

KW - silver oxide

UR - http://www.scopus.com/inward/record.url?scp=85081736866&partnerID=8YFLogxK

U2 - 10.1109/LMWC.2020.2971829

DO - 10.1109/LMWC.2020.2971829

M3 - Article

AN - SCOPUS:85081736866

SN - 1531-1309

VL - 30

SP - 268

EP - 271

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 3

M1 - 9001207

ER -

Photocharge-modulated passive intermodulation on AgO/Ag junction in high-power microwave devices

Abstract

ASJC Scopus subject areas

Zugriff auf Dokument

Andere Dateien und Links

Fingerprint

Dieses zitieren