Projekte pro Jahr
Abstract
Organic thin-film transistors for high frequency applications require large transconductances in combination with minimal parasitic capacitances. Techniques aiming at eliminating parasitic capacitances are prone to produce a mismatch between electrodes, in particular gaps between the gate and the interlayer electrodes. While such mismatches are typically undesirable, we demonstrate that, in fact, device structures with a small single-sided interlayer electrode gap directly probe the detrimental contact resistance arising from the presence of an injection barrier. By employing a self-alignment nanoimprint lithography technique, asymmetric coplanar organic transistors with an intentional gap of
varying size (< 0.2 μm) between gate and one interlayer electrode are fabricated. An electrode overlap
exceeding 1 μm with the other interlayer has been kept. Gaps, be them source or drain-sided, do not
preclude transistor operation. The operation of the device with a source-gate gap reveals a current
reduction up to two orders of magnitude compared to a source-sided overlap. Drift-diffusion based
simulations reveal that this marked reduction is a consequence of a weakened gate-induced field at the
contact which strongly inhibits injection.
Originalsprache | englisch |
---|---|
Aufsatznummer | 31387 |
Fachzeitschrift | Scientific Reports |
Jahrgang | 6 |
DOIs | |
Publikationsstatus | Veröffentlicht - 2016 |
ASJC Scopus subject areas
- Werkstoffwissenschaften (insg.)
Fields of Expertise
- Advanced Materials Science
Treatment code (Nähere Zuordnung)
- Basic - Fundamental (Grundlagenforschung)
Projekte
- 1 Abgeschlossen
-
FWF - TRANSIENT - Verständnis der transienten Charakteristik organischer Transistoren
1/03/14 → 28/02/18
Projekt: Forschungsprojekt