Abstract
Organic single-crystal field-effect transistors based on dithiophene-tetrathiafulvalene (DT-TTF) showing a charge-carrier mobility of 1.4 cm2/V s were recently reported. These crystals were prepared from solution, making this material interesting for potential applications in low-cost electronics. Here, we studied the temperature dependence of a DT-TTF field-effect transistor as well as the transport properties of single DT-TTF crystals. We found that the field-effect mobility follows a thermally activated hopping model with activation energy values (Ea) of around 85 meV, which is in agreement with the standard four-contact conductivity measurements performed on the single-crystals. In addition, the dependence of the E a with temperature and of the threshold voltage with gate-induced charge suggest that the crystals do not contain deep impurity traps.
Originalsprache | englisch |
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Seiten (von - bis) | 265-268 |
Seitenumfang | 4 |
Fachzeitschrift | Synthetic Metals |
Jahrgang | 146 |
Ausgabenummer | 3 |
DOIs | |
Publikationsstatus | Veröffentlicht - 3 Nov. 2004 |
Extern publiziert | Ja |
ASJC Scopus subject areas
- Elektronische, optische und magnetische Materialien
- Werkstoffchemie
- Polymere und Kunststoffe