Temperature dependence of the electrical properties of single-crystals of dithiophene-tetrathiafulvalene (DT-TTF)

M. Mas-Torrent*, P. Hadley, X. Ribas, C. Rovira

*Korrespondierende/r Autor/-in für diese Arbeit

Publikation: Beitrag in einer FachzeitschriftArtikelBegutachtung

Abstract

Organic single-crystal field-effect transistors based on dithiophene-tetrathiafulvalene (DT-TTF) showing a charge-carrier mobility of 1.4 cm2/V s were recently reported. These crystals were prepared from solution, making this material interesting for potential applications in low-cost electronics. Here, we studied the temperature dependence of a DT-TTF field-effect transistor as well as the transport properties of single DT-TTF crystals. We found that the field-effect mobility follows a thermally activated hopping model with activation energy values (Ea) of around 85 meV, which is in agreement with the standard four-contact conductivity measurements performed on the single-crystals. In addition, the dependence of the E a with temperature and of the threshold voltage with gate-induced charge suggest that the crystals do not contain deep impurity traps.

Originalspracheenglisch
Seiten (von - bis)265-268
Seitenumfang4
FachzeitschriftSynthetic Metals
Jahrgang146
Ausgabenummer3
DOIs
PublikationsstatusVeröffentlicht - 3 Nov. 2004
Extern publiziertJa

ASJC Scopus subject areas

  • Elektronische, optische und magnetische Materialien
  • Werkstoffchemie
  • Polymere und Kunststoffe

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