Abstract
Single atom detection in nanoporous materials is a significant challenge, particularly due to their sensitivity to electron irradiation. Here, natural beryl (Be3Al2Si6O18) is used as a model system to quantitatively analyse the occupancy of its atomic channels. High-angle annular dark-field imaging in a scanning transmission electron microscope is employed, revealing the presence of Cs atoms within the channels. Through statistical analysis of atomic column intensities and comparison with a series of multislice simulations, we successfully pinpoint the three-dimensional positions of individual Cs atoms. Our findings indicate a non-uniform distribution of Cs atoms in the crystal. Importantly, by extracting both the crystal thickness and atomic positions from a single high-resolution micrograph, we effectively minimize the adverse effects of beam damage. This approach offers a promising pathway for accurately determining the three-dimensional distribution of dopant atoms in various porous materials, opening new possibilities for the study and application of these technologically important materials.
Originalsprache | englisch |
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Aufsatznummer | 19 |
Seitenumfang | 9 |
Fachzeitschrift | Communications Materials |
Jahrgang | 5 |
Ausgabenummer | 1 |
DOIs | |
Publikationsstatus | Veröffentlicht - Dez. 2024 |
ASJC Scopus subject areas
- Werkstoffmechanik
- Allgemeine Materialwissenschaften
Fields of Expertise
- Advanced Materials Science
Treatment code (Nähere Zuordnung)
- Basic - Fundamental (Grundlagenforschung)