Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology

Varvara Bezhenova; Alicja Malgorzata Michalowska-Forsyth

Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology

Varvara Bezhenova, Alicja Malgorzata Michalowska-Forsyth

Institut für Elektronik (4390)

Publikation: Konferenzbeitrag › Poster › Begutachtung

Abstract

Abstract:
Total ionizing dose effects on transistors, fabricated in 0.18 μm CMOS technology are investigated. Radiation induced changes in NMOS and PMOS transistors parameters are discussed. Radiation induced narrow channel effect (RINCE) is demonstrated. Degree of influence of the bias conditions on the radiation response of the transistors in the given CMOS process is shown. Finally, impact of the devices electrical characteristics change on radiation hard design as well as outlook of further investigation activities is discussed.

Originalsprache	englisch
Seiten	366-369
Seitenumfang	4
Publikationsstatus	Veröffentlicht - 28 Juli 2016
Veranstaltung	Asia-Pacific International Symposium on Electromagnetic Compatibility & Signal Integrity (APEMC) - Shenzhen, China Dauer: 18 Mai 2016 → 21 Mai 2016

Konferenz

Konferenz	Asia-Pacific International Symposium on Electromagnetic Compatibility & Signal Integrity (APEMC)
Land/Gebiet	China
Ort	Shenzhen
Zeitraum	18/05/16 → 21/05/16

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http://ieeexplore.ieee.org/document/7522739/

1 Posterpräsentation

Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology
Varvara Bezhenova (Redner/in)
18 Mai 2016 → 21 Mai 2016
Aktivität: Vortrag oder Präsentation › Posterpräsentation › Science to science

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title = "Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology",

abstract = "Abstract:Total ionizing dose effects on transistors, fabricated in 0.18 μm CMOS technology are investigated. Radiation induced changes in NMOS and PMOS transistors parameters are discussed. Radiation induced narrow channel effect (RINCE) is demonstrated. Degree of influence of the bias conditions on the radiation response of the transistors in the given CMOS process is shown. Finally, impact of the devices electrical characteristics change on radiation hard design as well as outlook of further investigation activities is discussed.",

author = "Varvara Bezhenova and Michalowska-Forsyth, {Alicja Malgorzata}",

year = "2016",

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T1 - Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology

AU - Bezhenova, Varvara

AU - Michalowska-Forsyth, Alicja Malgorzata

PY - 2016/7/28

Y1 - 2016/7/28

N2 - Abstract:Total ionizing dose effects on transistors, fabricated in 0.18 μm CMOS technology are investigated. Radiation induced changes in NMOS and PMOS transistors parameters are discussed. Radiation induced narrow channel effect (RINCE) is demonstrated. Degree of influence of the bias conditions on the radiation response of the transistors in the given CMOS process is shown. Finally, impact of the devices electrical characteristics change on radiation hard design as well as outlook of further investigation activities is discussed.

AB - Abstract:Total ionizing dose effects on transistors, fabricated in 0.18 μm CMOS technology are investigated. Radiation induced changes in NMOS and PMOS transistors parameters are discussed. Radiation induced narrow channel effect (RINCE) is demonstrated. Degree of influence of the bias conditions on the radiation response of the transistors in the given CMOS process is shown. Finally, impact of the devices electrical characteristics change on radiation hard design as well as outlook of further investigation activities is discussed.

M3 - Poster

SP - 366

EP - 369

T2 - Asia-Pacific International Symposium on Electromagnetic Compatibility & Signal Integrity (APEMC)

Y2 - 18 May 2016 through 21 May 2016

ER -

Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology

Abstract

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Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology

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