Transmission Type Nano-Layered Electro-Optical Modulator for Chip-to-Chip Optical Interconnection: Electromagnetic Modelling by the Method of Single Expression

Hovik Baghdasaryan; Tamara Knyazyan; Tamara Hovhannisyan; Gurgen Mardoyan; Tigran Baghdasaryan; Hristo Danchov Ivanov; Pasha Bekhrad; Marian Marciniak; Erich Leitgeb

doi:10.1109/CoBCom55489.2022.9880646

Transmission Type Nano-Layered Electro-Optical Modulator for Chip-to-Chip Optical Interconnection: Electromagnetic Modelling by the Method of Single Expression

Hovik Baghdasaryan, Tamara Knyazyan, Tamara Hovhannisyan, Gurgen Mardoyan, Tigran Baghdasaryan, Hristo Danchov Ivanov, Pasha Bekhrad, Marian Marciniak, Erich Leitgeb

Institut für Hochfrequenztechnik (4510)

Publikation: Beitrag in Buch/Bericht/Konferenzband › Beitrag in einem Konferenzband › Begutachtung

Abstract

Advantages of optical links for data transmission are doubtless. Different types of optical interconnects for inter/intra chip links are under development. Electro-optical modulators (EOMs) are one of key elements of optical links. Transmission-type EOM for chip-to-chip optical interconnection is analysed by the method of single expression. Transmission properties of Fabry-Perot resonant type modulator consisting of electro-optical material embedded between Si/SiO2 distributed Bragg reflectors (DBRs) are analysed. From four possible types of DBRs the suitable structure has been chosen. Two semitransparent conducting electrodes for applying electrical signal to electro-optical material are parts of the nano-layered structure and are included in the electromagnetic model. As an external light source, a conventional laser diode of wavelength 1.55 μ m is taken. Efficiency of optical wave intensity modulation is analysed by means of influence of electro-optical material's permittivity change (under applied voltage) on resonator's maximal transmission peak shift. For the electro-optical material LiNbO3 of thickness about 1 mm the suitable resonance peak shift is obtained.

Originalsprache	englisch
Titel	2022 International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications, CoBCom 2022
Herausgeber (Verlag)	IEEE
ISBN (elektronisch)	9781665485982
DOIs	https://doi.org/10.1109/CoBCom55489.2022.9880646
Publikationsstatus	Elektronische Veröffentlichung vor Drucklegung. - 2022
Veranstaltung	4th International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications: CoBCom 2022 - TU Graz, Graz, Österreich Dauer: 12 Juli 2022 → 14 Juli 2022

Konferenz

Konferenz	4th International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications
Kurztitel	CoBCom 2022
Land/Gebiet	Österreich
Ort	Graz
Zeitraum	12/07/22 → 14/07/22

ASJC Scopus subject areas

Computernetzwerke und -kommunikation
Signalverarbeitung
Medientechnik

Zugriff auf Dokument

10.1109/CoBCom55489.2022.9880646

Andere Dateien und Links

Verknüpfung zur Publikation in Scopus

1 Abgeschlossen
1 Laufend

COST Action CA19111: European Network on Future Generation Optical Wireless Communication Technologies
Bekhrad, P. (Teilnehmer (Co-Investigator)), Hatab, Z. (Teilnehmer (Co-Investigator)), Pezzei, P. (Teilnehmer (Co-Investigator)), Lamprecht, C. (Teilnehmer (Co-Investigator)), Leitgeb, E. (Projektleiter (Principal Investigator)), Plank, T. (Teilnehmer (Co-Investigator)), Ivanov, H. D. (Teilnehmer (Co-Investigator)) & Liu, Y. (Teilnehmer (Co-Investigator))
15/05/20 → 9/12/26
Projekt: Forschungsprojekt
OptiKom-F 2003 - Optische Breitband-Kommunikation durch den freien Raum (Luft)
Plank, T. (Teilnehmer (Co-Investigator)), Pezzei, P. (Teilnehmer (Co-Investigator)), Brandl, P. (Teilnehmer (Co-Investigator)), Leitgeb, E. (Projektleiter (Principal Investigator)), Sheikh Muhammad, S. (Teilnehmer (Co-Investigator)), Zettl, K. (Teilnehmer (Co-Investigator)), Unterhuber, P. (Teilnehmer (Co-Investigator)) & Saleem Awan, M. (Teilnehmer (Co-Investigator))
1/12/03 → 31/12/11
Projekt: Forschungsprojekt

Dieses zitieren

Baghdasaryan, H., Knyazyan, T., Hovhannisyan, T., Mardoyan, G., Baghdasaryan, T., Ivanov, H. D., Bekhrad, P., Marciniak, M., & Leitgeb, E. (2022). Transmission Type Nano-Layered Electro-Optical Modulator for Chip-to-Chip Optical Interconnection: Electromagnetic Modelling by the Method of Single Expression. in 2022 International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications, CoBCom 2022 IEEE. Vorzeitige Online-Publikation. https://doi.org/10.1109/CoBCom55489.2022.9880646

Transmission Type Nano-Layered Electro-Optical Modulator for Chip-to-Chip Optical Interconnection: Electromagnetic Modelling by the Method of Single Expression. / Baghdasaryan, Hovik; Knyazyan, Tamara; Hovhannisyan, Tamara et al.
2022 International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications, CoBCom 2022. IEEE, 2022.

Publikation: Beitrag in Buch/Bericht/Konferenzband › Beitrag in einem Konferenzband › Begutachtung

Baghdasaryan, H, Knyazyan, T, Hovhannisyan, T, Mardoyan, G, Baghdasaryan, T, Ivanov, HD , Bekhrad, P, Marciniak, M & Leitgeb, E 2022, Transmission Type Nano-Layered Electro-Optical Modulator for Chip-to-Chip Optical Interconnection: Electromagnetic Modelling by the Method of Single Expression. in 2022 International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications, CoBCom 2022. IEEE, 4th International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications, Graz, Österreich, 12/07/22. https://doi.org/10.1109/CoBCom55489.2022.9880646

Baghdasaryan H, Knyazyan T, Hovhannisyan T, Mardoyan G, Baghdasaryan T, Ivanov HD et al. Transmission Type Nano-Layered Electro-Optical Modulator for Chip-to-Chip Optical Interconnection: Electromagnetic Modelling by the Method of Single Expression. in 2022 International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications, CoBCom 2022. IEEE. 2022 Epub 2022. doi: 10.1109/CoBCom55489.2022.9880646

Baghdasaryan, Hovik ; Knyazyan, Tamara ; Hovhannisyan, Tamara et al. / Transmission Type Nano-Layered Electro-Optical Modulator for Chip-to-Chip Optical Interconnection : Electromagnetic Modelling by the Method of Single Expression. 2022 International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications, CoBCom 2022. IEEE, 2022.

@inproceedings{e2eb129ce1cb4eaf9fe2340f9e40d8ee,

title = "Transmission Type Nano-Layered Electro-Optical Modulator for Chip-to-Chip Optical Interconnection: Electromagnetic Modelling by the Method of Single Expression",

abstract = "Advantages of optical links for data transmission are doubtless. Different types of optical interconnects for inter/intra chip links are under development. Electro-optical modulators (EOMs) are one of key elements of optical links. Transmission-type EOM for chip-to-chip optical interconnection is analysed by the method of single expression. Transmission properties of Fabry-Perot resonant type modulator consisting of electro-optical material embedded between Si/SiO2 distributed Bragg reflectors (DBRs) are analysed. From four possible types of DBRs the suitable structure has been chosen. Two semitransparent conducting electrodes for applying electrical signal to electro-optical material are parts of the nano-layered structure and are included in the electromagnetic model. As an external light source, a conventional laser diode of wavelength 1.55 μ m is taken. Efficiency of optical wave intensity modulation is analysed by means of influence of electro-optical material's permittivity change (under applied voltage) on resonator's maximal transmission peak shift. For the electro-optical material LiNbO3 of thickness about 1 mm the suitable resonance peak shift is obtained.",

keywords = "chip-to-chip interconnect, electro-optical modulator, electromagnetic modelling, method of single expression, numerical modelling",

author = "Hovik Baghdasaryan and Tamara Knyazyan and Tamara Hovhannisyan and Gurgen Mardoyan and Tigran Baghdasaryan and Ivanov, {Hristo Danchov} and Pasha Bekhrad and Marian Marciniak and Erich Leitgeb",

note = "Funding Information: ACKNOWLEDGMENTS This work was supported by the Science Committee of the Republic of Armenia (SC of RA), in the frames of the research project № 21T-2J194. This publication was based upon work from COST Action NEWFOCUS CA19111, supported by COST (European Cooperation in Science and Technology). Publisher Copyright: {\textcopyright} 2022 IEEE.; 4th International Conference on Broadband Communications for Next<br/>Generation Networks and Multimedia Applications : CoBCom 2022, CoBCom 2022 ; Conference date: 12-07-2022 Through 14-07-2022",

year = "2022",

doi = "10.1109/CoBCom55489.2022.9880646",

language = "English",

booktitle = "2022 International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications, CoBCom 2022",

publisher = "IEEE",

address = "United States",

}

TY - GEN

T1 - Transmission Type Nano-Layered Electro-Optical Modulator for Chip-to-Chip Optical Interconnection

T2 - 4th International Conference on Broadband Communications for Next<br/>Generation Networks and Multimedia Applications

AU - Baghdasaryan, Hovik

AU - Knyazyan, Tamara

AU - Hovhannisyan, Tamara

AU - Mardoyan, Gurgen

AU - Baghdasaryan, Tigran

AU - Ivanov, Hristo Danchov

AU - Bekhrad, Pasha

AU - Marciniak, Marian

AU - Leitgeb, Erich

N1 - Funding Information: ACKNOWLEDGMENTS This work was supported by the Science Committee of the Republic of Armenia (SC of RA), in the frames of the research project № 21T-2J194. This publication was based upon work from COST Action NEWFOCUS CA19111, supported by COST (European Cooperation in Science and Technology). Publisher Copyright: © 2022 IEEE.

PY - 2022

Y1 - 2022

N2 - Advantages of optical links for data transmission are doubtless. Different types of optical interconnects for inter/intra chip links are under development. Electro-optical modulators (EOMs) are one of key elements of optical links. Transmission-type EOM for chip-to-chip optical interconnection is analysed by the method of single expression. Transmission properties of Fabry-Perot resonant type modulator consisting of electro-optical material embedded between Si/SiO2 distributed Bragg reflectors (DBRs) are analysed. From four possible types of DBRs the suitable structure has been chosen. Two semitransparent conducting electrodes for applying electrical signal to electro-optical material are parts of the nano-layered structure and are included in the electromagnetic model. As an external light source, a conventional laser diode of wavelength 1.55 μ m is taken. Efficiency of optical wave intensity modulation is analysed by means of influence of electro-optical material's permittivity change (under applied voltage) on resonator's maximal transmission peak shift. For the electro-optical material LiNbO3 of thickness about 1 mm the suitable resonance peak shift is obtained.

AB - Advantages of optical links for data transmission are doubtless. Different types of optical interconnects for inter/intra chip links are under development. Electro-optical modulators (EOMs) are one of key elements of optical links. Transmission-type EOM for chip-to-chip optical interconnection is analysed by the method of single expression. Transmission properties of Fabry-Perot resonant type modulator consisting of electro-optical material embedded between Si/SiO2 distributed Bragg reflectors (DBRs) are analysed. From four possible types of DBRs the suitable structure has been chosen. Two semitransparent conducting electrodes for applying electrical signal to electro-optical material are parts of the nano-layered structure and are included in the electromagnetic model. As an external light source, a conventional laser diode of wavelength 1.55 μ m is taken. Efficiency of optical wave intensity modulation is analysed by means of influence of electro-optical material's permittivity change (under applied voltage) on resonator's maximal transmission peak shift. For the electro-optical material LiNbO3 of thickness about 1 mm the suitable resonance peak shift is obtained.

KW - chip-to-chip interconnect

KW - electro-optical modulator

KW - electromagnetic modelling

KW - method of single expression

KW - numerical modelling

UR - http://www.scopus.com/inward/record.url?scp=85139415821&partnerID=8YFLogxK

U2 - 10.1109/CoBCom55489.2022.9880646

DO - 10.1109/CoBCom55489.2022.9880646

M3 - Conference paper

AN - SCOPUS:85139415821

BT - 2022 International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications, CoBCom 2022

PB - IEEE

Y2 - 12 July 2022 through 14 July 2022

ER -

Transmission Type Nano-Layered Electro-Optical Modulator for Chip-to-Chip Optical Interconnection: Electromagnetic Modelling by the Method of Single Expression

Abstract

Konferenz

ASJC Scopus subject areas

Zugriff auf Dokument

Andere Dateien und Links

Fingerprint

Projekte

COST Action CA19111: European Network on Future Generation Optical Wireless Communication Technologies

OptiKom-F 2003 - Optische Breitband-Kommunikation durch den freien Raum (Luft)

Dieses zitieren