TY - JOUR
T1 - Tris(trimethylsilyl)germane (Me3Si)3GeH: A Molecular Model for Sulfur Passivation of Ge(111) Surfaces,
AU - Okorn, Gilbert
AU - Fischer, Roland
AU - Steller, Beate Gabriele
AU - Engesser, Philipp
AU - Okorn-Schmidt, Harald
PY - 2016
Y1 - 2016
N2 - Tristrimethylsilylgermane, (Me3Si)3GeH, was employed as a molecular model compound for hydrogen terminated Ge(111) surfaces. Time and temperature dependent NMR spectroscopy yielded rate constants for the reaction between (Me3Si)3GeH and elemental sulfur and allowed for the determination of the activation energy for this molecular model reaction to mimic germanium surface passivation.
AB - Tristrimethylsilylgermane, (Me3Si)3GeH, was employed as a molecular model compound for hydrogen terminated Ge(111) surfaces. Time and temperature dependent NMR spectroscopy yielded rate constants for the reaction between (Me3Si)3GeH and elemental sulfur and allowed for the determination of the activation energy for this molecular model reaction to mimic germanium surface passivation.
U2 - 10.4028/www.scientific.net/SSP.255.36
DO - 10.4028/www.scientific.net/SSP.255.36
M3 - Article
SN - 1662-9779
VL - 255
SP - 36
EP - 40
JO - Solid State Phenomena
JF - Solid State Phenomena
ER -