High-resolution cross-sectional analysis of the interface between SiC and SiO2 in a MOSFET device via atomic resolution STEM

Activity: Talk or presentationTalk at conference or symposiumScience to science

Period23 Sep 201926 Sep 2019
Event title30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
Event typeConference
LocationToulouse , FranceShow on map
Degree of RecognitionInternational

ASJC Scopus subject areas

  • Materials Science(all)

Fields of Expertise

  • Advanced Materials Science

Treatment code (Nähere Zuordnung)

  • Basic - Fundamental (Grundlagenforschung)