SIRENS - Studies of Ionizing Radiation Effects in NanoScale Technology Nodes for High Energy Physics Experiments

Description

Abstract: Radiation effects on electronic devices have been in research focus for over four decades. New degradation mechanisms are being observed with new device developments and in particular with scaling of the integrated circuits. The SIRENS project focuses on radiation-induced device degradation in CMOS processes with high dielectric constant (high-K) gate stack. Specifically the planar bulk 28 nm and 40 nm MOS transistors are investigated. The high-K gate stack coupled with severe device scaling is going to be studied in terms of geometry-dependence and the dominant locations of interface and oxide traps. The radiation effects will be modelled for device-level simulation.
The issue of accelerated testing in this reliability studies has to be addressed. The degradation under high rate and low rate X-ray beam will be evaluated, where the received total ionizing dose is identical in both cases. It will be concluded on dose rate sensitivity of high-K MOSFETS.

Period	28 Sept 2020
Event title	Advanced Materials Day 2020
Event type	Conference
Location	Virtuell, AustriaShow on map
Degree of Recognition	Local