Defects in Semiconductors studied by Positron Annihilation

Project: Research project

Project Details


The aim of this project is the study of atomic defects in semiconductors by positron annihilation spectroscopy. The thermal behaviour of grown in and introduced defects by electron or proton irradiation is observed by measuring the positron lifetime and the doppler broadening of the annihilation radiation.
Effective start/end date1/01/9831/01/13


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