UltimateGaN - Research for GaN technologies, devices and applications to address the challenges of the future GaN roadmap

The project proposal “UltimateGaN” aims at achieving significant improvements in terms of the CO2 footprint of the digitalisation. This will be done by enabling the next generation of Galliumnitride (GaN)-technologies and packages for the European Electronic Components and Systems industry. Several FP7 and H2020 projects, among them the ECSEL pilot-line project “PowerBase” are the basis for the availability of the first generation of European GaN-devices. But these projects also made clearly evident, that the challenges of the GaN technologies have been heavily underestimated. This results in a still very high potential of the GaN material system that will be addressed by a “Research and Innovation Action”. Thus, UltimateGaN is positioned as a RIA and includes the entire value chain (technology, packaging, reliability, application) while consistently focusing on the three main pillars: (1) Explore the path toward vertical power GaN devices and related technologies; (2) Explore the limits toward best in class power density and efficiency enabled by the newest lateral GaN Technologies; (3) Bringing GaN on Silicon radiofrequency (RF) performance close to GaN on Silicon Carbide thus enabling affordable 5G. These main pillars are accompanied by the following objectives: (4) Overcome the packaging limits for high performance GaN power products; (5) Most advanced reliability and defect understanding for novel GaN device concepts; (6) Safeguard European leadership in high performance power and RF applications to master the grand societal challenges. The investigation of all these pillars will enable a beyond state-of-the-art GaN technology that follows a vertical, supply chain oriented approach. The resulting affordable GaN-devices will enable a broad spectrum of innovative and energy efficient applications that foster the digitalisation attempts.