Abstract
Thin films with low dielectric constant were deposited by PECVD from different organosilicon precursors. Film structure and properties were strongly affected by the precursor choice. Silane-based precursors resulted in films with permittivities as low as 2.3 with a limited -thickness loss of 6% upon thermal annealing at 400 °C. Films deposited from siloxane monomers were characterized by increased thickness shrinkage of 11%. Thermal stability was correlated not only to the cross-linking degree but also to the presence of methylene bridges in the polymer backbone, which accounts for the better thermal stability of silane-based films. Substrate heating (15O0C) during deposition ensured the best balance between very low permittivities and good thermal stability.
Original language | English |
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Pages (from-to) | 512-520 |
Number of pages | 9 |
Journal | Plasma Processes and Polymers |
Volume | 6 |
Issue number | 8 |
DOIs | |
Publication status | Published - 15 Aug 2009 |
Externally published | Yes |
Keywords
- Dielectric constant
- Methylene bridges
- Organosilicon films
- Siloxane bridges
- Thermal stability
ASJC Scopus subject areas
- Condensed Matter Physics
- Polymers and Plastics