A chemical study of plasma-deposited organosilicon thin films as low-k dielectrics

Anna M. Coclite, Antonella Milella*, Fabio Palumbo, Francesco Fracassi, Riccardo D'Agostino

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Thin films with low dielectric constant were deposited by PECVD from different organosilicon precursors. Film structure and properties were strongly affected by the precursor choice. Silane-based precursors resulted in films with permittivities as low as 2.3 with a limited -thickness loss of 6% upon thermal annealing at 400 °C. Films deposited from siloxane monomers were characterized by increased thickness shrinkage of 11%. Thermal stability was correlated not only to the cross-linking degree but also to the presence of methylene bridges in the polymer backbone, which accounts for the better thermal stability of silane-based films. Substrate heating (15O0C) during deposition ensured the best balance between very low permittivities and good thermal stability.

Original languageEnglish
Pages (from-to)512-520
Number of pages9
JournalPlasma Processes and Polymers
Issue number8
Publication statusPublished - 15 Aug 2009
Externally publishedYes


  • Dielectric constant
  • Methylene bridges
  • Organosilicon films
  • Siloxane bridges
  • Thermal stability

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Polymers and Plastics


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