All van der Waals Semiconducting PtSe2 Field Effect Transistors with Low Contact Resistance Graphite Electrodes

M. Awais Aslam; Simon Leitner; Shubham Tyagi; Alexandros Provias; Vadym Tkachuk; Egon Pavlica; Martina Dienstleder; Daniel Knez; Kenji Watanabe; Takashi Taniguchi; Dayu Yan; Youguo Shi; Theresia Knobloch; Michael Waltl; Udo Schwingenschlögl; Tibor Grasser; Aleksandar Matković

doi:10.1021/acs.nanolett.4c00956

All van der Waals Semiconducting PtSe₂ Field Effect Transistors with Low Contact Resistance Graphite Electrodes

M. Awais Aslam, Simon Leitner, Shubham Tyagi, Alexandros Provias, Vadym Tkachuk, Egon Pavlica, Martina Dienstleder, Daniel Knez, Kenji Watanabe, Takashi Taniguchi, Dayu Yan, Youguo Shi, Theresia Knobloch, Michael Waltl, Udo Schwingenschlögl, Tibor Grasser, Aleksandar Matković^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Contact resistance is a multifaceted challenge faced by the 2D materials community. Large Schottky barrier heights and gap-state pinning are active obstacles that require an integrated approach to achieve the development of high-performance electronic devices based on 2D materials. In this work, we present semiconducting PtSe₂ field effect transistors with all-van-der-Waals electrode and dielectric interfaces. We use graphite contacts, which enable high I_ON/I_OFF ratios up to 10⁹ with currents above 100 μA μm^-1 and mobilities of 50 cm² V^-1 s^-1 at room temperature and over 400 cm² V^-1 s^-1 at 10 K. The devices exhibit high stability with a maximum hysteresis width below 36 mV nm^-1. The contact resistance at the graphite-PtSe₂ interface is found to be below 700 Ω μm. Our results present PtSe₂ as a promising candidate for the realization of high-performance 2D circuits built solely with 2D materials.

Original language	English
Pages (from-to)	6529–6537
Number of pages	9
Journal	Nano Letters
Volume	24
Issue number	22
DOIs	https://doi.org/10.1021/acs.nanolett.4c00956
Publication status	Published - 5 Jun 2024

Keywords

contact resistance
graphene
graphite electrodes
Platinum diselenide
transistors

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

Access to Document

10.1021/acs.nanolett.4c00956Licence: CC BY-NC-ND 4.0

Cite this

Aslam, M. A., Leitner, S., Tyagi, S., Provias, A., Tkachuk, V., Pavlica, E., Dienstleder, M., Knez, D., Watanabe, K., Taniguchi, T., Yan, D., Shi, Y., Knobloch, T., Waltl, M., Schwingenschlögl, U., Grasser, T., & Matković, A. (2024). All van der Waals Semiconducting PtSe₂ Field Effect Transistors with Low Contact Resistance Graphite Electrodes. Nano Letters, 24(22), 6529–6537. https://doi.org/10.1021/acs.nanolett.4c00956

Aslam, MA, Leitner, S, Tyagi, S, Provias, A, Tkachuk, V, Pavlica, E, Dienstleder, M , Knez, D, Watanabe, K, Taniguchi, T, Yan, D, Shi, Y, Knobloch, T, Waltl, M, Schwingenschlögl, U, Grasser, T & Matković, A 2024, 'All van der Waals Semiconducting PtSe₂ Field Effect Transistors with Low Contact Resistance Graphite Electrodes', Nano Letters, vol. 24, no. 22, pp. 6529–6537. https://doi.org/10.1021/acs.nanolett.4c00956

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title = "All van der Waals Semiconducting PtSe2 Field Effect Transistors with Low Contact Resistance Graphite Electrodes",

abstract = "Contact resistance is a multifaceted challenge faced by the 2D materials community. Large Schottky barrier heights and gap-state pinning are active obstacles that require an integrated approach to achieve the development of high-performance electronic devices based on 2D materials. In this work, we present semiconducting PtSe2 field effect transistors with all-van-der-Waals electrode and dielectric interfaces. We use graphite contacts, which enable high ION/IOFF ratios up to 109 with currents above 100 μA μm-1 and mobilities of 50 cm2 V-1 s-1 at room temperature and over 400 cm2 V-1 s-1 at 10 K. The devices exhibit high stability with a maximum hysteresis width below 36 mV nm-1. The contact resistance at the graphite-PtSe2 interface is found to be below 700 Ω μm. Our results present PtSe2 as a promising candidate for the realization of high-performance 2D circuits built solely with 2D materials.",

keywords = "contact resistance, graphene, graphite electrodes, Platinum diselenide, transistors",

author = "Aslam, {M. Awais} and Simon Leitner and Shubham Tyagi and Alexandros Provias and Vadym Tkachuk and Egon Pavlica and Martina Dienstleder and Daniel Knez and Kenji Watanabe and Takashi Taniguchi and Dayu Yan and Youguo Shi and Theresia Knobloch and Michael Waltl and Udo Schwingenschl{\"o}gl and Tibor Grasser and Aleksandar Matkovi{\'c}",

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AU - Aslam, M. Awais

AU - Leitner, Simon

AU - Tyagi, Shubham

AU - Provias, Alexandros

AU - Tkachuk, Vadym

AU - Pavlica, Egon

AU - Dienstleder, Martina

AU - Knez, Daniel

AU - Watanabe, Kenji

AU - Taniguchi, Takashi

AU - Yan, Dayu

AU - Shi, Youguo

AU - Knobloch, Theresia

AU - Waltl, Michael

AU - Schwingenschlögl, Udo

AU - Grasser, Tibor

AU - Matković, Aleksandar

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AB - Contact resistance is a multifaceted challenge faced by the 2D materials community. Large Schottky barrier heights and gap-state pinning are active obstacles that require an integrated approach to achieve the development of high-performance electronic devices based on 2D materials. In this work, we present semiconducting PtSe2 field effect transistors with all-van-der-Waals electrode and dielectric interfaces. We use graphite contacts, which enable high ION/IOFF ratios up to 109 with currents above 100 μA μm-1 and mobilities of 50 cm2 V-1 s-1 at room temperature and over 400 cm2 V-1 s-1 at 10 K. The devices exhibit high stability with a maximum hysteresis width below 36 mV nm-1. The contact resistance at the graphite-PtSe2 interface is found to be below 700 Ω μm. Our results present PtSe2 as a promising candidate for the realization of high-performance 2D circuits built solely with 2D materials.

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