An on-chip detector of transient stress events

A. Patnaik, M. Suchak, R. Seva, K. Pamidimukkala, D. Pommerenke, G. Edgington, R. Moseley, J. Feddeler, M. Stockinger, D. Beetner

Research output: Chapter in Book/Report/Conference proceedingConference paperpeer-review


Testing and debugging of electrostatic discharge (ESD) or electrical fast transient (EFT) issues in modern electronic systems can be challenging. The following paper describes the design of an on-chip circuit which detects and stores the occurrence of a fast transient stress event at the ESD protection structures in an I/O pad. Measurements and simulations of a test circuit in 90 nm technology show it can accurately detect and record the presence of a transient stress event with a peak current as low as 0.9 A or duration as short as 1 ns and that the detector works well across typical temperature and process variations. The small size of the detector will allow it to be used effectively even in low-cost commercial ICs.

Original languageEnglish
Title of host publication2017 IEEE International Symposium on Electromagnetic Compatibility, Signal and Power Integrity, EMCSI 2017 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers
Number of pages6
ISBN (Electronic)9781538622308
Publication statusPublished - 20 Oct 2017
Externally publishedYes
Event2017 IEEE International Symposium on Electromagnetic Compatibility and Signal/Power Integrity: EMCSI 2017 - Washington, United States
Duration: 7 Aug 201711 Aug 2017

Publication series

NameIEEE International Symposium on Electromagnetic Compatibility
ISSN (Print)1077-4076
ISSN (Electronic)2158-1118


Conference2017 IEEE International Symposium on Electromagnetic Compatibility and Signal/Power Integrity
Country/TerritoryUnited States


  • Electrical fast transient (EFT)
  • Electrostatic discharge (ESD)
  • ESD detectors
  • On-chip measurements
  • System level ESD

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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