Anisotropic dislocation-domain wall interactions in ferroelectrics

Fangping Zhuo, Xiandong Zhou, Shuang Gao, Marion Höfling, Felix Dietrich, Pedro B. Groszewicz, Lovro Fulanović, Patrick Breckner, Andreas Wohninsland, Bai Xiang Xu, Hans Joachim Kleebe, Xiaoli Tan, Jurij Koruza, Dragan Damjanovic, Jürgen Rödel*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Dislocations are usually expected to degrade electrical, thermal and optical functionality and to tune mechanical properties of materials. Here, we demonstrate a general framework for the control of dislocation–domain wall interactions in ferroics, employing an imprinted dislocation network. Anisotropic dielectric and electromechanical properties are engineered in barium titanate crystals via well-controlled line-plane relationships, culminating in extraordinary and stable large-signal dielectric permittivity (≈23100) and piezoelectric coefficient (≈2470 pm V–1). In contrast, a related increase in properties utilizing point-plane relation prompts a dramatic cyclic degradation. Observed dielectric and piezoelectric properties are rationalized using transmission electron microscopy and time- and cycle-dependent nuclear magnetic resonance paired with X-ray diffraction. Succinct mechanistic understanding is provided by phase-field simulations and driving force calculations of the described dislocation–domain wall interactions. Our 1D-2D defect approach offers a fertile ground for tailoring functionality in a wide range of functional material systems.

Original languageEnglish
Article number6676
JournalNature Communications
Issue number1
Publication statusPublished - Dec 2022

ASJC Scopus subject areas

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • General
  • Physics and Astronomy(all)

Fields of Expertise

  • Advanced Materials Science


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