Complementary evaluation of potential barriers in semiconducting barium titanate by electrostatic force microscopy and capacitance–voltage measurements

Jennifer M. Prohinig*, Johanna Hütner, Klaus Reichmann, Stephan Bigl

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Electrostatic force microscopy (EFM) was used to directly image the impact of SiO2 content variations on the grain boundary potential barriers in semiconducting BaTiO3-based ceramics. The grain boundary barriers were shown to be significantly thinner and more pronounced as the amount of SiO2 was increased from 0 to 5 mol%. The EFM results were confirmed by capacitance–voltage (C–V) measurements which proofs the accuracy of both methods and highlights their importance for gaining a better understanding of the interrelations between material composition and electrical properties.

Original languageEnglish
Article number114646
JournalScripta Materialia
Volume214
DOIs
Publication statusPublished - Jun 2022

Keywords

  • BaTiO3
  • Electrostatic forcce microscopy
  • Grain boundary potential barriers
  • PTCR ceramics

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys

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