Abstract
Electrostatic force microscopy (EFM) was used to directly image the impact of SiO2 content variations on the grain boundary potential barriers in semiconducting BaTiO3-based ceramics. The grain boundary barriers were shown to be significantly thinner and more pronounced as the amount of SiO2 was increased from 0 to 5 mol%. The EFM results were confirmed by capacitance–voltage (C–V) measurements which proofs the accuracy of both methods and highlights their importance for gaining a better understanding of the interrelations between material composition and electrical properties.
Original language | English |
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Article number | 114646 |
Journal | Scripta Materialia |
Volume | 214 |
DOIs | |
Publication status | Published - Jun 2022 |
Keywords
- BaTiO3
- Electrostatic forcce microscopy
- Grain boundary potential barriers
- PTCR ceramics
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys