Abstract
In this work, an analysis of the impact of drain field plate (FP) length on the semi-on degradation of AlGaN/GaN high-electron-mobility transistors (HEMTs) is performed. A wafer-level characterization, by means of pulsed stress tests, reveals a faster and more severe decrease of the drain current in the linear region for the samples with longer drain FP. 2-D technology computer-aided design (TCAD) hydrodynamic simulations show that a time and field-dependent hot electrons (HEs) trapping takes place at the passivation/barrier interface. The higher drain current decrease in the longer FP samples can be ascribed to an enhanced HE trapping at the drain FP edge due to a different electric field distribution.
Original language | English |
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Pages (from-to) | 5003 - 5008 |
Number of pages | 6 |
Journal | IEEE Transactions on Electron Devices |
Volume | 68 |
Issue number | 10 |
DOIs | |
Publication status | Published - Oct 2021 |
Keywords
- Degradation
- Dynamic effects
- gallium nitride
- hard-switching (HSW)
- HEMTs
- high-electron-mobility transistor (HEMT)
- hot electrons (HEs)
- hydrodynamic (HD) simulations
- Logic gates
- MODFETs
- semi-on.
- Stress
- Transient analysis
- Wide band gap semiconductors
- semi-ON
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Fields of Expertise
- Information, Communication & Computing