Electric Field Effect in Sm1-xCaxBa2Cu3Oy Bicrystal Junctions

Z. W. Dong; V. C. Matijasevic; P. Hadley; S. M. Shao; J. E. Mooij

doi:10.1109/77.403193

Electric Field Effect in Sm1-xCaxBa2Cu3Oy Bicrystal Junctions

Z. W. Dong, V. C. Matijasevic, P. Hadley, S. M. Shao, J. E. Mooij

Research output: Contribution to journal › Article › peer-review

Abstract

A three terminal device was fabricated by depositing a thin film of Ca-doped SmBa2Cu3Oy on a bicrystal SrTiO3 substrate and then structuring a gate over the resulting junction. The channel shows RSJ-like Josephson junction behavior. By applying a voltage to the gate, a large electric field effect was observed. The largest field effect was observed in films where 30% of the Sm was replaced by Ca. The critical current of the junction was modulated 23% by the application of an electric field of 5x105 V/cm. This electric field is about 100 times smaller than the electric field necessary for the field effects observed in homogeneous films. The sign of the field effect is consistent with that expected for a carrier-depleted grain boundary region.

Original language	English
Pages (from-to)	2879-2882
Number of pages	4
Journal	IEEE Transactions on Applied Superconductivity
Volume	5
Issue number	2
DOIs	https://doi.org/10.1109/77.403193
Publication status	Published - 1995
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Physics and Astronomy (miscellaneous)

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title = "Electric Field Effect in Sm1-xCaxBa2Cu3Oy Bicrystal Junctions",

abstract = "A three terminal device was fabricated by depositing a thin film of Ca-doped SmBa2Cu3Oy on a bicrystal SrTiO3 substrate and then structuring a gate over the resulting junction. The channel shows RSJ-like Josephson junction behavior. By applying a voltage to the gate, a large electric field effect was observed. The largest field effect was observed in films where 30% of the Sm was replaced by Ca. The critical current of the junction was modulated 23% by the application of an electric field of 5x105 V/cm. This electric field is about 100 times smaller than the electric field necessary for the field effects observed in homogeneous films. The sign of the field effect is consistent with that expected for a carrier-depleted grain boundary region.",

author = "Dong, {Z. W.} and Matijasevic, {V. C.} and P. Hadley and Shao, {S. M.} and Mooij, {J. E.}",

year = "1995",

doi = "10.1109/77.403193",

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publisher = "Institute of Electrical and Electronics Engineers",

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T1 - Electric Field Effect in Sm1-xCaxBa2Cu3Oy Bicrystal Junctions

AU - Dong, Z. W.

AU - Matijasevic, V. C.

AU - Hadley, P.

AU - Shao, S. M.

AU - Mooij, J. E.

PY - 1995

Y1 - 1995

N2 - A three terminal device was fabricated by depositing a thin film of Ca-doped SmBa2Cu3Oy on a bicrystal SrTiO3 substrate and then structuring a gate over the resulting junction. The channel shows RSJ-like Josephson junction behavior. By applying a voltage to the gate, a large electric field effect was observed. The largest field effect was observed in films where 30% of the Sm was replaced by Ca. The critical current of the junction was modulated 23% by the application of an electric field of 5x105 V/cm. This electric field is about 100 times smaller than the electric field necessary for the field effects observed in homogeneous films. The sign of the field effect is consistent with that expected for a carrier-depleted grain boundary region.

AB - A three terminal device was fabricated by depositing a thin film of Ca-doped SmBa2Cu3Oy on a bicrystal SrTiO3 substrate and then structuring a gate over the resulting junction. The channel shows RSJ-like Josephson junction behavior. By applying a voltage to the gate, a large electric field effect was observed. The largest field effect was observed in films where 30% of the Sm was replaced by Ca. The critical current of the junction was modulated 23% by the application of an electric field of 5x105 V/cm. This electric field is about 100 times smaller than the electric field necessary for the field effects observed in homogeneous films. The sign of the field effect is consistent with that expected for a carrier-depleted grain boundary region.

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Electric Field Effect in Sm1-xCaxBa2Cu3Oy Bicrystal Junctions

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