Electrically detected magnetic resonance study on defects in Si pn-junctions created by proton implantation

Gernot Gruber*, Stefan Kirnstötter, Peter Hadley*, Markus Koch, Thomas Aichinger, Holger Schulze, Werner Schustereder

*Corresponding author for this work

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Abstract

The present study focuses on electrically detected magnetic resonance (EDMR) investigations of proton implanted silicon. The samples were prepared on n-type silicon wafers highly doped diffused boron (B) p-region, forming a pn-junction. A large additional n-type doping was introduced by proton (H+) implantation. We compare samples with implantation doses up to 1015 H+/cm–2 and investigate the effects of anneals at 350 °C. We observe different types of defects in the differently prepared samples. One doublet with 118.5 G HF splitting and a g -value of 2.0095(4) is only observed in the samples implanted with the highest dose and is assigned to hydrogen. The structure of the other observed defects remains unidentified and can only tentatively be assigned to hydrogen. More extensive measurements would have to be performed to get a better picture.
Original languageEnglish
Pages (from-to)1-4
JournalPhysica Status Solidi (C) - Current Topics in Solid State Physics
Volume11
Issue number11/12
DOIs
Publication statusPublished - 2014

Fields of Expertise

  • Advanced Materials Science

Treatment code (Nähere Zuordnung)

  • Experimental

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