Electronic properties of organic thin-film transistors containing a chemically reactive, acidic interfacial layer between the gate dielectric and the active material: impact of layer thickness

Simon Josef Außerlechner; Marco Marchl; Heinz-Georg Flesch; Anja Haase; Barbara Stadlober; Peter Pacher; Roland Resel; Christian Slugovc; Gregor Trimmel; Egbert Zojer

Electronic properties of organic thin-film transistors containing a chemically reactive, acidic interfacial layer between the gate dielectric and the active material: impact of layer thickness

Simon Josef Außerlechner, Marco Marchl, Heinz-Georg Flesch, Anja Haase, Barbara Stadlober, Peter Pacher, Roland Resel, Christian Slugovc, Gregor Trimmel, Egbert Zojer

Research output: Contribution to conference › Poster

Original language	English
Publication status	Published - 2009
Event	International Conference on Organic Electronics 2009 - University of Liverpool, Liverpool, UK Duration: 15 Jun 2009 → 17 Jun 2009

Conference

Conference	International Conference on Organic Electronics 2009
City	University of Liverpool, Liverpool, UK
Period	15/06/09 → 17/06/09

Cite this

Außerlechner, S. J., Marchl, M., Flesch, H-G., Haase, A., Stadlober, B., Pacher, P., Resel, R., Slugovc, C., Trimmel, G., & Zojer, E. (2009). Electronic properties of organic thin-film transistors containing a chemically reactive, acidic interfacial layer between the gate dielectric and the active material: impact of layer thickness. Poster session presented at International Conference on Organic Electronics 2009, University of Liverpool, Liverpool, UK.

Electronic properties of organic thin-film transistors containing a chemically reactive, acidic interfacial layer between the gate dielectric and the active material: impact of layer thickness. / Außerlechner, Simon Josef; Marchl, Marco; Flesch, Heinz-Georg et al.
2009. Poster session presented at International Conference on Organic Electronics 2009, University of Liverpool, Liverpool, UK.

Research output: Contribution to conference › Poster

Außerlechner, SJ, Marchl, M, Flesch, H-G, Haase, A, Stadlober, B, Pacher, P, Resel, R , Slugovc, C , Trimmel, G & Zojer, E 2009, 'Electronic properties of organic thin-film transistors containing a chemically reactive, acidic interfacial layer between the gate dielectric and the active material: impact of layer thickness', International Conference on Organic Electronics 2009, University of Liverpool, Liverpool, UK, 15/06/09 - 17/06/09.

Außerlechner SJ, Marchl M, Flesch H-G, Haase A, Stadlober B, Pacher P et al.. Electronic properties of organic thin-film transistors containing a chemically reactive, acidic interfacial layer between the gate dielectric and the active material: impact of layer thickness. 2009. Poster session presented at International Conference on Organic Electronics 2009, University of Liverpool, Liverpool, UK.

Außerlechner, Simon Josef ; Marchl, Marco ; Flesch, Heinz-Georg et al. / Electronic properties of organic thin-film transistors containing a chemically reactive, acidic interfacial layer between the gate dielectric and the active material: impact of layer thickness. Poster session presented at International Conference on Organic Electronics 2009, University of Liverpool, Liverpool, UK.

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author = "Au{\ss}erlechner, {Simon Josef} and Marco Marchl and Heinz-Georg Flesch and Anja Haase and Barbara Stadlober and Peter Pacher and Roland Resel and Christian Slugovc and Gregor Trimmel and Egbert Zojer",

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language = "English",

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TY - CONF

T1 - Electronic properties of organic thin-film transistors containing a chemically reactive, acidic interfacial layer between the gate dielectric and the active material: impact of layer thickness

AU - Außerlechner, Simon Josef

AU - Marchl, Marco

AU - Flesch, Heinz-Georg

AU - Haase, Anja

AU - Stadlober, Barbara

AU - Pacher, Peter

AU - Resel, Roland

AU - Slugovc, Christian

AU - Trimmel, Gregor

AU - Zojer, Egbert

PY - 2009

Y1 - 2009

UR - http://icoe09.com/

M3 - Poster

T2 - International Conference on Organic Electronics 2009

Y2 - 15 June 2009 through 17 June 2009

ER -

Electronic properties of organic thin-film transistors containing a chemically reactive, acidic interfacial layer between the gate dielectric and the active material: impact of layer thickness

Conference

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