Embedding of High Power RF Transistor Dies in PCB Laminate

Ioannis Peppas, Hiroaki Takahashi, Jim Yip, Erich Schlaffer, Helmut Paulitsch, Wolfgang Bösch

Research output: Chapter in Book/Report/Conference proceedingConference paperpeer-review


This paper describes a novel packaging method for high power RF transistors, which minimizes chip to matching-network interconnect parasitic elements. Interconnect parasitics have significant importance for the development of high-frequency or harmonically-tuned power amplifiers and also for advanced power amplifier architectures such as Doherty. The demonstrated packaging method minimizes such parasitics by embedding of the chip inside the PCB laminate, enabling the development of low cost power amplifier modules for higher frequencies and wider bandwidths. The performance of an embedded device is compared to a wire-bonded device using loadpull measurements, to show the effect of the embedding on conventional high power RF transistors.
Original languageEnglish
Title of host publication2022 52nd European Microwave Conference (EuMC)
PublisherIEEE Xplore
Number of pages4
ISBN (Print)978-1-6654-5881-8
Publication statusPublished - 29 Sept 2022
Event52nd European Microwave Conference : EuMC 2022 - Milan, Italy, Italy
Duration: 27 Sept 202229 Sept 2022


Conference52nd European Microwave Conference
Abbreviated titleEuMC 2022


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