Erratum to: Design and theoretical comparison of input ESD devices in 180 nm CMOS with focus on low capacitance (e & i Elektrotechnik und Informationstechnik, (2018), 135, 1, (69-75), 10.1007/s00502-017-0569-0)

Alicja Michalowska-Forsyth; Patrick Schrey; Bernd Deutschmann

doi:10.1007/s00502-018-0648-x

Erratum to: Design and theoretical comparison of input ESD devices in 180 nm CMOS with focus on low capacitance (e & i Elektrotechnik und Informationstechnik, (2018), 135, 1, (69-75), 10.1007/s00502-017-0569-0)

Alicja Michalowska-Forsyth^*, Patrick Schrey, Bernd Deutschmann

^*Corresponding author for this work

Institute of Electronics (4390)

Research output: Contribution to journal › Article › peer-review

Abstract

Erratum to: Elektrotechnik & Informationstechnik (2018) 135/1: 69–75https://doi.org/10.1007/s00502-017-0569-0 Following Acknowledgement was missing: The financial support of the presented research work by the Austrian Science Fund (FWF) under the project number T 756-N20 is gratefully acknowledged.

Original language	English
Pages (from-to)	224
Journal	Elektrotechnik und Informationstechnik
Volume	136
Issue number	2
DOIs	https://doi.org/10.1007/s00502-018-0648-x
Publication status	Published - 2019

ASJC Scopus subject areas

Electrical and Electronic Engineering

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Erratum to: Design and theoretical comparison of input ESD devices in 180 nm CMOS with focus on low capacitance (e & i Elektrotechnik und Informationstechnik, (2018), 135, 1, (69-75), 10.1007/s00502-017-0569-0). / Michalowska-Forsyth, Alicja; Schrey, Patrick; Deutschmann, Bernd.
In: Elektrotechnik und Informationstechnik, Vol. 136, No. 2, 2019, p. 224.

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Michalowska-Forsyth, A, Schrey, P & Deutschmann, B 2019, 'Erratum to: Design and theoretical comparison of input ESD devices in 180 nm CMOS with focus on low capacitance (e & i Elektrotechnik und Informationstechnik, (2018), 135, 1, (69-75), 10.1007/s00502-017-0569-0)', Elektrotechnik und Informationstechnik, vol. 136, no. 2, pp. 224. https://doi.org/10.1007/s00502-018-0648-x

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Erratum to: Design and theoretical comparison of input ESD devices in 180 nm CMOS with focus on low capacitance (e & i Elektrotechnik und Informationstechnik, (2018), 135, 1, (69-75), 10.1007/s00502-017-0569-0)

Abstract

ASJC Scopus subject areas

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