Evidence for an abrupt transition between SiO2 and SiC from eels and Ab initio modelling

Jonathon Cottom*, Manesh V. Mistry, Gernot Gruber, Gregor Pobegen, Thomas Aichinger, Alexander L. Shluger

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference paperpeer-review


Electron energy loss spectroscopy (EELS) and ab initio simulations are combined in this study to produce an atomistic interpretation of the interface morphology in lateral 4H-SiC / SiO2 MOSFETs with deposited gate oxides. This allows the question of interface abruptness, and the presence the postulated SiOxCy interlayer to be explored for a subset of devices with deposited oxides. From comparison between EELS and ab initio calculation the interfaces considered are best described as abrupt, but stepped, transitioning without any of the carbon excess or SiOxCy interlayer that have been described for other devices observed.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials, 2018
EditorsPeter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield
PublisherTrans Tech Publications Ltd.
Number of pages5
ISBN (Print)9783035713329
Publication statusPublished - 1 Jan 2019
Event12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 - Birmingham, United Kingdom
Duration: 2 Sept 20186 Sept 2018

Publication series

NameMaterials Science Forum
Volume963 MSF
ISSN (Print)0255-5476


Conference12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018
Country/TerritoryUnited Kingdom


  • Core-loss simulation
  • Density functional theory (DFT)
  • Electron energy loss spectroscopy (EELS)
  • Gate oxide
  • Interface characterization
  • Transmission electron microscopy (TEM)

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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