Fast and simple model generation for superjunction power MOSFETs: An easy way to get accurate SPICE models even without exact information from the datasheet

This paper describes a new way to create a behavioral model for power MOSFETs with highly nonlinear parasitic capacitances like those based on superjunction (SJ) principles. The process ranges from a simple measurement to the final model for SPICE simulations. One of the benefits of the proposed modeling technique is that it does not require any information about the voltage-dependent capacitances of the MOSFET from the data sheet but instead relies on a simple measurement method using a vector network analyzer. The measurement data can be used for modeling all parasitic capacitances and inductances in the SPICE model. Compared to existing simulation models by the manufacturer, the proposed model promises better convergence, more accurate high-frequency behavior and faster simulation time. The advantages and disadvantages of this modeling technique are discussed.