Abstract
Field levels in indirect electrostatic discharge (ESD) test setups are hardly known yet. It has been proposed to ANSI and IEC to use a horizontal simulator position instead of a vertical position in indirect ESD testing. This paper shows the field values on the horizontal coupling plane for different excitations and grounding topologies and questions if the goal of the change - a reduction of the simulator influence - will be achieved. Also, investigations dealing with the sensitivity of digital devices to impulsive fields are presented.
Original language | English |
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Pages (from-to) | 177-190 |
Number of pages | 14 |
Journal | Journal of Electrostatics |
Volume | 44 |
Issue number | 3-4 |
DOIs | |
Publication status | Published - 1 Jan 1998 |
Externally published | Yes |
Event | Electrical Overstress/Electrostatic Discharge Symposium - Santa Clara, United States Duration: 23 Sept 1997 → 25 Sept 1997 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Biotechnology
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering