Gas inclusions within a 7 nm Al2O3 thin film part of a Memristive Device

O. Gronenberg, Finn Zahari, Julian Strobel, Georg Haberfehlner, Hermann Kohlstedt, Lorenz Kienle

Research output: Contribution to conferenceAbstract


Double barrier memristive devices are under investigation, which consist of a 2.5 nm thick NbOx (or HfOx) layersandwiched between an Al2O3 tunnel barrier and a Schottky-like contact to an Au top electrode. These devices showbipolar interface-based analogue resistive switching which is most probably due to the migration of oxygen vacanciesthat change the interfacial properties [1]. Inside the tunnel barrier, argon and oxygen gas was found in pores of FIBlamellas which are vacuum-tightly encapsulated in the thin film. The formation and the influence of these pores on thedevices are analyzed in this study.
Original languageEnglish
Publication statusPublished - 2021
Event2021 Microscopy Conference: MC 2021 - Virtuell, Austria
Duration: 22 Aug 202126 Aug 2021


Conference2021 Microscopy Conference
Abbreviated titleMC 2021

ASJC Scopus subject areas

  • General Materials Science

Fields of Expertise

  • Advanced Materials Science

Treatment code (Nähere Zuordnung)

  • Basic - Fundamental (Grundlagenforschung)

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