Growth kinetics of individual Al-Cu intermetallic compounds

Heinrich Koerner, Sergey Ananiev, Robert Bauer, Rui Huang, Roland Resel, Yik Yee Tan, Jürgen Walter

Research output: Chapter in Book/Report/Conference proceedingConference paperpeer-review


The growth kinetics of Al-Cu intermetallic compounds (IMC) have been investigated on thin film couples and bonded samples in the range 150°C to 250°C using XRD, SEM/EDX and in-situ interface resistance monitoring. Individual diffusion constants D o and activation energies E a (1.01eV, 0.97eV, 1.23eV, 1.28eV) have been obtained from thin film couples for the main three IMC phases Al 4 Cu 9 , AlCu and Al 2 Cu, and for the total IMC growth, respectively. Two additional phases (Al 3 Cu 2 , Al 0.06 Cu 0.94 ) contribute to the total IMC growth at T ≥ 200°C, but do not form at lower temperatures. Lower activation energies of 1.13eV (thin film) and 1.05eV (bonded samples) have thus been derived for T
Original languageEnglish
Title of host publication2014 IEEE International Interconnect Technology Conference
Publication statusPublished - 2014
Event2014 IEEE International Interconnect Technology Conference: IITC 2014 - San Jose, United States
Duration: 20 May 201423 May 2014


Conference2014 IEEE International Interconnect Technology Conference
Abbreviated titleIITC 2014
Country/TerritoryUnited States
CitySan Jose

Fields of Expertise

  • Advanced Materials Science

Treatment code (Nähere Zuordnung)

  • Basic - Fundamental (Grundlagenforschung)

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