Growth kinetics of individual Al-Cu intermetallic compounds

Heinrich Koerner; Sergey Ananiev; Robert Bauer; Rui Huang; Roland Resel; Yik Yee Tan; Jürgen Walter

doi:10.1109/IITC.2014.6831855

Growth kinetics of individual Al-Cu intermetallic compounds

Heinrich Koerner, Sergey Ananiev, Robert Bauer, Rui Huang, Roland Resel, Yik Yee Tan, Jürgen Walter

Institute of Solid State Physics (5130)

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › peer-review

Abstract

The growth kinetics of Al-Cu intermetallic compounds (IMC) have been investigated on thin film couples and bonded samples in the range 150°C to 250°C using XRD, SEM/EDX and in-situ interface resistance monitoring. Individual diffusion constants D o and activation energies E a (1.01eV, 0.97eV, 1.23eV, 1.28eV) have been obtained from thin film couples for the main three IMC phases Al 4 Cu 9 , AlCu and Al 2 Cu, and for the total IMC growth, respectively. Two additional phases (Al 3 Cu 2 , Al 0.06 Cu 0.94 ) contribute to the total IMC growth at T ≥ 200°C, but do not form at lower temperatures. Lower activation energies of 1.13eV (thin film) and 1.05eV (bonded samples) have thus been derived for T

Original language	English
Title of host publication	2014 IEEE International Interconnect Technology Conference
Pages	109-112
DOIs	https://doi.org/10.1109/IITC.2014.6831855
Publication status	Published - 2014
Event	2014 IEEE International Interconnect Technology Conference: IITC 2014 - San Jose, United States Duration: 20 May 2014 → 23 May 2014

Conference

Conference	2014 IEEE International Interconnect Technology Conference
Abbreviated title	IITC 2014
Country/Territory	United States
City	San Jose
Period	20/05/14 → 23/05/14

Fields of Expertise

Advanced Materials Science

Treatment code (Nähere Zuordnung)

Basic - Fundamental (Grundlagenforschung)

Access to Document

10.1109/IITC.2014.6831855

Cite this

@inproceedings{e87a69a503ff442f9d4c4ac6c05c8814,

title = "Growth kinetics of individual Al-Cu intermetallic compounds",

abstract = "The growth kinetics of Al-Cu intermetallic compounds (IMC) have been investigated on thin film couples and bonded samples in the range 150°C to 250°C using XRD, SEM/EDX and in-situ interface resistance monitoring. Individual diffusion constants D o and activation energies E a (1.01eV, 0.97eV, 1.23eV, 1.28eV) have been obtained from thin film couples for the main three IMC phases Al 4 Cu 9 , AlCu and Al 2 Cu, and for the total IMC growth, respectively. Two additional phases (Al 3 Cu 2 , Al 0.06 Cu 0.94 ) contribute to the total IMC growth at T ≥ 200°C, but do not form at lower temperatures. Lower activation energies of 1.13eV (thin film) and 1.05eV (bonded samples) have thus been derived for T ",

author = "Heinrich Koerner and Sergey Ananiev and Robert Bauer and Rui Huang and Roland Resel and Tan, {Yik Yee} and J{\"u}rgen Walter",

year = "2014",

doi = "10.1109/IITC.2014.6831855",

language = "English",

pages = "109--112",

booktitle = "2014 IEEE International Interconnect Technology Conference",

note = "2014 IEEE International Interconnect Technology Conference : IITC 2014, IITC 2014 ; Conference date: 20-05-2014 Through 23-05-2014",

}

TY - GEN

T1 - Growth kinetics of individual Al-Cu intermetallic compounds

AU - Koerner, Heinrich

AU - Ananiev, Sergey

AU - Bauer, Robert

AU - Huang, Rui

AU - Resel, Roland

AU - Tan, Yik Yee

AU - Walter, Jürgen

PY - 2014

Y1 - 2014

N2 - The growth kinetics of Al-Cu intermetallic compounds (IMC) have been investigated on thin film couples and bonded samples in the range 150°C to 250°C using XRD, SEM/EDX and in-situ interface resistance monitoring. Individual diffusion constants D o and activation energies E a (1.01eV, 0.97eV, 1.23eV, 1.28eV) have been obtained from thin film couples for the main three IMC phases Al 4 Cu 9 , AlCu and Al 2 Cu, and for the total IMC growth, respectively. Two additional phases (Al 3 Cu 2 , Al 0.06 Cu 0.94 ) contribute to the total IMC growth at T ≥ 200°C, but do not form at lower temperatures. Lower activation energies of 1.13eV (thin film) and 1.05eV (bonded samples) have thus been derived for T

AB - The growth kinetics of Al-Cu intermetallic compounds (IMC) have been investigated on thin film couples and bonded samples in the range 150°C to 250°C using XRD, SEM/EDX and in-situ interface resistance monitoring. Individual diffusion constants D o and activation energies E a (1.01eV, 0.97eV, 1.23eV, 1.28eV) have been obtained from thin film couples for the main three IMC phases Al 4 Cu 9 , AlCu and Al 2 Cu, and for the total IMC growth, respectively. Two additional phases (Al 3 Cu 2 , Al 0.06 Cu 0.94 ) contribute to the total IMC growth at T ≥ 200°C, but do not form at lower temperatures. Lower activation energies of 1.13eV (thin film) and 1.05eV (bonded samples) have thus been derived for T

U2 - 10.1109/IITC.2014.6831855

DO - 10.1109/IITC.2014.6831855

M3 - Conference paper

SP - 109

EP - 112

BT - 2014 IEEE International Interconnect Technology Conference

T2 - 2014 IEEE International Interconnect Technology Conference

Y2 - 20 May 2014 through 23 May 2014

ER -

Growth kinetics of individual Al-Cu intermetallic compounds

Abstract

Conference

Fields of Expertise

Treatment code (Nähere Zuordnung)

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