Highly aligned organic semiconductor thin films grown by Hot Wall Epitaxy

A. Andreev, Roland Resel, D.-M. Smilgies, H. Hoppe, G. Matt, H. Sitter, N. S. Sariciftci, D. Meissner, D. Lysacek, L. Valek

Research output: Contribution to journalArticle

Abstract

In this work we use atomic force microscopy to study the early growth stages of para-sexiphenyl (PSP) films grown on mica by Hot Wall Epitaxy. It is shown that self-organization of PSP molecules occurs during the growth controlled mainly by the substrate temperature and deposition time. In addition X-ray diffraction measurements were performed using synchrotron radiation. These measurements confirmed very high crystalline quality of the grown films
Original languageEnglish
Pages (from-to)61-70
JournalMolecular Crystals and Liquid Crystals
Volume385
Issue number1
DOIs
Publication statusPublished - 2002

Treatment code (Nähere Zuordnung)

  • Experimental

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