Highly robust electron beam lithography lift-off process using chemically amplified positive tone resist and PEDOT:PSS as a protective coating

Johannes Kofler, Kerstin Schmoltner, Andreas Klug, Emil List-Kratochvil*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Highly sensitive chemically amplified resists are well suited for large-area, high-resolution rapid prototyping by electron beam lithography. The major drawback of these resists is their susceptibility to T-topping effects, sensitivity losses, and linewidth variations caused by delay times between individual process steps. Hence, they require a very tight process control, which hinders their potentially wide application in R&D. We demonstrate a highly robust electron beam lithography lift-off process using a chemically amplified positive tone 40XT photoresist in combination with an acidic conducting polymer (PEDOT:PSS) as a protective top-coating. Even extended delay times of 24 h did not lead to any sensitivity losses or linewidth variations. Moreover, an overall high performance with a resolution of 80 nm (after lift-off) and a high sensitivity (
Original languageEnglish
Article number095010
Number of pages7
JournalJournal of Micromechanics and Microengineering
Issue number9
Publication statusPublished - 2014

Fields of Expertise

  • Advanced Materials Science

Treatment code (Nähere Zuordnung)

  • Basic - Fundamental (Grundlagenforschung)

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