Hydrogen ion-selective electrolyte-gated organic field-effect transistor for pH sensing

Johannes Kofler, Kerstin Schmoltner, Andreas Klug, Emil List-Kratochvil

Research output: Contribution to journalArticlepeer-review


The defect complexes that are formed when protons with energies in the MeV-range were implanted into high-purity silicon were investigated. After implantation, the samples were annealed at 400 °C or 450 °C for times ranging between 15 minutes and 30 hours. The resistivity of the samples was then analyzed by Spreading Resistance Profiling (SRP). The resistivity shows minima where there is a high carrier concentration and it is possible to extract the carrier concentration from the resistivity data. Initially, there is a large peak in the carrier concentration at the implantation depth where most of the hydrogen is concentrated. For longer anneals, this peak widens as the hydrogen diffuses away from the implantation depth. Following the changes in resistivity as a function of annealing time allows us to characterize the diffusion of hydrogen through these samples. Differences in the diffusion were observed depending on whether the silicon was grown by the magnetic Czochralski (m:Cz) method or the Float zone (Fz) method.
Original languageEnglish
Article number193305
Number of pages5
JournalApplied Physics Letters
Issue number19
Publication statusPublished - 2014

Fields of Expertise

  • Advanced Materials Science

Treatment code (Nähere Zuordnung)

  • Basic - Fundamental (Grundlagenforschung)

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