Influence of crystallization temperature and atmosphere on the phase composition, microstructure and electrical properties of Ni–Mn–O thin films

Sebastian Redolfi*, Klaus Reichmann

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Nickel manganite thin films were prepared by chemical solution deposition from nitrate and acetate precursors on polished alumina substrates. By variation of crystallization temperature between 650 ​°C and 900 ​°C and atmosphere during cooling of the films, the morphology, phase formation and electrical properties of the films were investigated. The electrically conductive spinel phase was formed as a main phase independent of processing conditions exhibiting NTCR characteristics. Cooling down in nitrogen atmosphere favored the decomposition of the spinel phase into nickel oxide and a spinel phase with higher manganese content, but it also reduced the resistance drift of the samples. From this finding it can be deduced that a reduced oxygen partial pressure influences defect equilibria and by that decreases cation vacancy concentration. This supports the assumption that cation redistribution by a cation vacancy diffusion mechanism is a relevant mechanism of resistance drift in such thin films.

Original languageEnglish
Article number100124
JournalOpen Ceramics
Publication statusPublished - Jun 2021


  • Chemical Solution Deposition
  • NTC Thermistor
  • Thin film

ASJC Scopus subject areas

  • Biomaterials
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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