Influence of growth temperature on the properties of aluminum nitride thin films prepared by magnetron sputter epitaxy

High quality, uni-polar, epitaxial AlN with minimum oxygen content promises excellent surface acoustic wave and bulk acoustic wave resonator characteristics such as high electromechanical coupling coefficient and power handling capabilities, which is particularly useful for RF filter applications. By systematically varying the growth temperature, the study investigates its impact on the oxygen levels, defect states, and crystallographic texture of the AlN thin films using a combination of atomic force microscopy, X-ray diffraction, time-of-flight secondary ion mass spectrometry, spectroscopic ellipsometry, scanning transmission electron microscopy, as well as room temperature and temperature dependent I-V measurements. The research demonstrates that the films grown at a temperature of 700 ° C exhibit the most favorable results. These films exhibit the lowest oxygen levels, possess epitaxial growth, and display the highest crystalline quality (XRD AlN 0002 ω − FWHM = 1.3 ° ). Additionally, these films demonstrate a significant reduction in sub-bandgap absorption. By comparing the cathode current measured during deposition, we suggest that the presence of an impurity layer formed during idle time between depositions as a possible source of oxygen in the sputter chamber. In addition, the study presents a possible model to explain the mixed polarity observed in AlN and proposes various ways to achieve uni-polar AlN on silicon substrates.