Abstract
Perovskite solar cells with a planar p-i-n device structure offer easy processability at low temperatures, suitable for roll-to-roll fabrication on flexible substrates. Herein we investigate different hole transport layers (solution processed NiOx, sputtered NiOx, PEDOT:PSS) in planar p-i-n perovskite solar cells using the triple cation lead halide perovskite Cs0.08(MA0.17FA0.83)0.92Pb(I0.83Br0.17)3 as absorber layer. Overall, reproducible solar cell performances with power conversion efficiencies up to 12.8% were obtained using solution processed NiOx as hole transport layer in the devices. Compared to that, devices with PEDOT:PSS as hole transport layer yield efficiencies of approx. 8.4%. Further improvement of the fill factor was achieved by the use of an additional zinc oxide nanoparticle layer between the PC60BM film and the Ag electrode.
Original language | English |
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Pages (from-to) | 1847-1855 |
Number of pages | 9 |
Journal | Journal of Materials Science: Materials in Electronics |
Volume | 29 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1 Feb 2018 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering
Fields of Expertise
- Advanced Materials Science