Abstract
In this work the characterization of CMOS diodes with Electron Beam Induced Current (EBIC) measurements in a Scanning Electron Microscope (SEM) are presented. Three-dimensional Technology Computer Aided Design (TCAD) simulations of the EBIC measurement were performed for the first time to help interpret the experimental results. The TCAD simulations provide direct access to the spatial distribution of physical quantities (like mobility, lifetime etc.) which are very difficult to obtain experimentally. For the calibration of the simulation to the experiments, special designs of vertical p-n diodes were fabricated. These structures were investigated with respect to doping concentration, beam energy, and biasing. A strong influence of the surface preparation on the measurements and the extracted diffusion lengths are shown.
Original language | English |
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Title of host publication | Scanning Microscopies 2014 |
Publisher | SPIE |
Volume | 9236 |
ISBN (Print) | 9781628412994 |
DOIs | |
Publication status | Published - 2014 |
Event | Scanning Microscopies 2014 - Monterey, United States Duration: 16 Sept 2014 → 18 Sept 2014 |
Conference
Conference | Scanning Microscopies 2014 |
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Country/Territory | United States |
City | Monterey |
Period | 16/09/14 → 18/09/14 |
Keywords
- CMOS photodiodes
- diffusion length extraction
- e-beam simulation
- EBIC
- TCAD simulation
ASJC Scopus subject areas
- Applied Mathematics
- Computer Science Applications
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics