Low TID effects on MOS transistors

Varvara Bezhenova; Alicja Malgorzata Michalowska-Forsyth; Walter Pflanzl

doi:10.1109/RADECS45761.2018.9328689

Low TID effects on MOS transistors

Varvara Bezhenova, Alicja Malgorzata Michalowska-Forsyth, Walter Pflanzl

Institute of Electronics (4390)

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › peer-review

Abstract

MOS transistors are susceptible to total ionizing dose (TID) effects. Although TID effects have been studied for the past decades, most of the studies focus on doses far beyond 100 krad. In various applications, TID is between 1 and 100 krad. In this study we discuss TID effects on DC and noise performance of NMOS and PMOS transistors with thick gate oxide at TID

Original language	English
Title of host publication	2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
Place of Publication	Gothenburg
Number of pages	4
DOIs	https://doi.org/10.1109/RADECS45761.2018.9328689
Publication status	Published - 2021
Event	18th Conference on Radiation Effects on Components and Systems : RADECS 2018 - Gothenburg, Sweden Duration: 16 Sept 2018 → 21 Sept 2018 http://www.radecs2018.org/

Conference

Conference	18th Conference on Radiation Effects on Components and Systems
Abbreviated title	RADECS 2018
Country/Territory	Sweden
City	Gothenburg
Period	16/09/18 → 21/09/18
Internet address	http://www.radecs2018.org/

ASJC Scopus subject areas

Electrical and Electronic Engineering
Radiation

Treatment code (Nähere Zuordnung)

Basic - Fundamental (Grundlagenforschung)
Experimental

Access to Document

10.1109/RADECS45761.2018.9328689

1 Conference or symposium (Participation in/Organisation of)
1 Poster presentation

18th Conference on Radiation Effects on Components and Systems
Varvara Bezhenova (Participant) & Alicja Malgorzata Michalowska-Forsyth (Participant)
16 Sept 2018 → 21 Sept 2018
Activity: Participation in or organisation of › Conference or symposium (Participation in/Organisation of)
Low TID effects on MOS transistors
Varvara Bezhenova (Speaker), Alicja Malgorzata Michalowska-Forsyth (Speaker) & Walter Pflanzl (Contributor)
19 Sept 2018
Activity: Talk or presentation › Poster presentation › Science to science

Cite this

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title = "Low TID effects on MOS transistors",

abstract = "MOS transistors are susceptible to total ionizing dose (TID) effects. Although TID effects have been studied for the past decades, most of the studies focus on doses far beyond 100 krad. In various applications, TID is between 1 and 100 krad. In this study we discuss TID effects on DC and noise performance of NMOS and PMOS transistors with thick gate oxide at TID ",

author = "Varvara Bezhenova and Michalowska-Forsyth, {Alicja Malgorzata} and Walter Pflanzl",

year = "2021",

doi = "10.1109/RADECS45761.2018.9328689",

language = "English",

booktitle = "2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)",

note = "18th Conference on Radiation Effects on Components and Systems : RADECS 2018, RADECS 2018 ; Conference date: 16-09-2018 Through 21-09-2018",

url = "http://www.radecs2018.org/",

}

TY - GEN

T1 - Low TID effects on MOS transistors

AU - Bezhenova, Varvara

AU - Michalowska-Forsyth, Alicja Malgorzata

AU - Pflanzl, Walter

PY - 2021

Y1 - 2021

N2 - MOS transistors are susceptible to total ionizing dose (TID) effects. Although TID effects have been studied for the past decades, most of the studies focus on doses far beyond 100 krad. In various applications, TID is between 1 and 100 krad. In this study we discuss TID effects on DC and noise performance of NMOS and PMOS transistors with thick gate oxide at TID

AB - MOS transistors are susceptible to total ionizing dose (TID) effects. Although TID effects have been studied for the past decades, most of the studies focus on doses far beyond 100 krad. In various applications, TID is between 1 and 100 krad. In this study we discuss TID effects on DC and noise performance of NMOS and PMOS transistors with thick gate oxide at TID

U2 - 10.1109/RADECS45761.2018.9328689

DO - 10.1109/RADECS45761.2018.9328689

M3 - Conference paper

BT - 2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

CY - Gothenburg

T2 - 18th Conference on Radiation Effects on Components and Systems

Y2 - 16 September 2018 through 21 September 2018

ER -

Low TID effects on MOS transistors

Abstract

Conference

ASJC Scopus subject areas

Treatment code (Nähere Zuordnung)

Access to Document

Activities

18th Conference on Radiation Effects on Components and Systems

Low TID effects on MOS transistors

Cite this