Low TID effects on MOS transistors

Varvara Bezhenova, Alicja Malgorzata Michalowska-Forsyth, Walter Pflanzl

Research output: Chapter in Book/Report/Conference proceedingConference paperpeer-review


MOS transistors are susceptible to total ionizing dose (TID) effects. Although TID effects have been studied for the past decades, most of the studies focus on doses far beyond 100 krad. In various applications, TID is between 1 and 100 krad. In this study we discuss TID effects on DC and noise performance of NMOS and PMOS transistors with thick gate oxide at TID
Original languageEnglish
Title of host publication2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
Place of PublicationGothenburg
Number of pages4
Publication statusPublished - 2021
Event18th Conference on Radiation Effects on Components and Systems : RADECS 2018 - Gothenburg, Sweden
Duration: 16 Sept 201821 Sept 2018


Conference18th Conference on Radiation Effects on Components and Systems
Abbreviated titleRADECS 2018
Internet address

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation

Treatment code (Nähere Zuordnung)

  • Basic - Fundamental (Grundlagenforschung)
  • Experimental

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