Modeling of annular gate MOS transistor

Research output: Chapter in Book/Report/Conference proceedingConference paperpeer-review


Enclosed layout is an effective way to mitigate radiation induced leakage current in NMOS transistors. The unconventional shape of such device makes modeling a challenging task. Evaluation of equivalent aspect ratio estimation is complicated by additional stress effects, such as STI stress. We incorporate the STI stress effect into simulation for enclosed layout transistor in order to evaluate accuracy of two equivalent aspect ratio evaluation models: the well-known mid-line approximation and the recently introduced isosceles trapezoid approximation
Original languageEnglish
Title of host publication2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
Place of PublicationGothenburg
Number of pages4
Publication statusPublished - 2021
Event18th Conference on Radiation Effects on Components and Systems : RADECS 2018 - Gothenburg, Sweden
Duration: 16 Sept 201821 Sept 2018


Conference18th Conference on Radiation Effects on Components and Systems
Abbreviated titleRADECS 2018
Internet address

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation
  • Modelling and Simulation


Dive into the research topics of 'Modeling of annular gate MOS transistor'. Together they form a unique fingerprint.

Cite this