Modeling of the immunity of ICs to EFTs

Ji Zhang*, Jayong Koo, Daryl G. Beetner, Richard Moseley, Scott Herrin, David Pommerenke

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference paperpeer-review


Investigation of the immunity of ICs to EFTs is increasingly important. In this paper, an accurate model of a microcontroller is developed and verified. This model consists of two parts: a passive Power Distribution Network (PDN) model and an active I/O protection network model. Measurement methods are designed to extract the parameters of the passive PDN model. The accuracy of the overall model of the IC is verified using both S parameter tests and EFT injection tests. The model is able to accurately predict the voltage and current at power-supply and I/O pins and correctly accounts for the active components of the I/O protection network.

Original languageEnglish
Title of host publicationIEEE International Symposium on Electromagnetic Compatibility, EMC 2010 - Final Program
Number of pages6
Publication statusPublished - 1 Dec 2010
Externally publishedYes
Event2010 IEEE International Symposium on Electromagnetic Compatibility: EMC 2010 - Fort Lauderdale, United States
Duration: 25 Jul 201030 Jul 2010

Publication series

NameIEEE International Symposium on Electromagnetic Compatibility
ISSN (Print)1077-4076


Conference2010 IEEE International Symposium on Electromagnetic Compatibility
Country/TerritoryUnited States
CityFort Lauderdale

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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