Nanoimprinted complementary organic electronics: Single transistors and inverters

Thomas Rothländer, Ursula Palfinger, B. Stadlober, Anja Haase, Herbert Gold, Christian Palfinger, Johanna Kraxner, Georg Jakopic, Paul Hartmann, Gerhard Domann

Research output: Contribution to journalArticlepeer-review


We demonstrate the fabrication of shadow mask (SM) patterned as well as nanoimprint lithography (NIL) patterned organic transistors and integrated complementary organic inverters (ICOIs). As active layers pentacene (p-type) and either PTCDI-C13H27 or F16CuPc (n-type) were used. The SM-patterned ICOIs with a staggered bottom gate configuration, a nanocomposite dielectric and both active layer combinations (pentacene/PTCDI C13H27, pentacene/F16CuPc) exhibited high performance (3 V operation voltage; gain around 60; high level 3 V; low level 5 mV; noise margin 0.9 V). Flexible ICOIs with transistor channel lengths of 900 nm were successfully fabricated by NIL, using a benzocyclobutene derivative as dielectric. Because of the process inherent coplanar bottom gate configuration, F16CuPc was used. The ICOIs showed proper functionality (3 V operation voltage; gain around 5; high level 2.9 V; low level 25 mV). To our knowledge, this study demonstrates the first complementary submicron inverters based on fully R2R compatible imprint processes
Original languageEnglish
Pages (from-to)2470-2478
JournalJournal of Materials Research
Issue number19
Publication statusPublished - 2011

Fields of Expertise

  • Advanced Materials Science

Treatment code (Nähere Zuordnung)

  • Basic - Fundamental (Grundlagenforschung)

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