Abstract
This paper analyses a charge-based Non-Volatile Memory device: the Sidewall Spacer. Multiple test-dies from a 55nm standard CMOS process are tested up to 500krad assessing data retention depending on charge injection in the nitride spacer.
Original language | English |
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Number of pages | 5 |
Publication status | Published - Nov 2020 |
Event | 2020 Nuclear & Space Radiation Effects Conference - Virtuell Duration: 1 Dec 2020 → 8 Dec 2020 http://www.nsrec.com/ |
Conference
Conference | 2020 Nuclear & Space Radiation Effects Conference |
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Abbreviated title | NSREC 2020 |
City | Virtuell |
Period | 1/12/20 → 8/12/20 |
Internet address |
Keywords
- flash memory
- Nonvolatile Memories
- radiation effects
- Total Ionizing Dose
- x-ray
- charge based