Program time effects on Total ionizing Dose tolerance of Sidewall Spacer Memory Bit Cell

Tommaso Vincenzi, Gregor Schatzberger, Alicja Malgorzata Michalowska-Forsyth

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › peer-review

Original language	English
Title of host publication	2019 Austrochip Workshop on Microelectronics
Subtitle of host publication	Austrochip 2019
Place of Publication	Vienna
Publisher	CPS, IEEE Xplore
Pages	55
Number of pages	58
ISBN (Electronic)	978-1-7281-1953-3
Publication status	Published - 24 Oct 2019
Event	27th Austrochip Workshop on Microelectronics: Austrochip 2019 - FH Technikum Wien, Wien, Austria Duration: 24 Oct 2019 → 24 Oct 2019 Conference number: 27 https://embsys.technikum-wien.at/austrochip2019/ https://embsys.technikum-wien.at/austrochip2019/program/index.htm

Workshop	27th Austrochip Workshop on Microelectronics
Abbreviated title	Austrochip
Country/Territory	Austria
City	Wien
Period	24/10/19 → 24/10/19
Internet address	https://embsys.technikum-wien.at/austrochip2019/ https://embsys.technikum-wien.at/austrochip2019/program/index.htm

Keywords

Program time effects on Total ionizing Dose tolerance of Sidewall Spacer Memory Bit Cell. / Vincenzi, Tommaso; Schatzberger, Gregor; Michalowska-Forsyth, Alicja Malgorzata.
2019 Austrochip Workshop on Microelectronics: Austrochip 2019. Vienna: CPS, IEEE Xplore, 2019. p. 55.

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › peer-review

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title = "Program time effects on Total ionizing Dose tolerance of Sidewall Spacer Memory Bit Cell",

keywords = "Nonvolatile Memories, Radiation Hardness, Total Ionizing Dose",

author = "Tommaso Vincenzi and Gregor Schatzberger and Michalowska-Forsyth, {Alicja Malgorzata}",

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BT - 2019 Austrochip Workshop on Microelectronics

PB - CPS, IEEE Xplore

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T2 - 27th Austrochip Workshop on Microelectronics

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