Simulation of silicon semiconductor devices by means of a direct Boltzmann-Poisson solver

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	979-994
Journal	COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering
Volume	25
Publication status	Published - 2006

Treatment code (Nähere Zuordnung)

@article{f01e0c046b824c5a8fbb7fbfc9ab14fb,

title = "Simulation of silicon semiconductor devices by means of a direct Boltzmann-Poisson solver",

author = "Christian Ertler and Ferdinand Sch{\"u}rrer",

year = "2006",

language = "English",

volume = "25",

pages = "979--994",

journal = "COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering",

issn = "2054-5606",

publisher = "Emerald Group Publishing Ltd.",

}

TY - JOUR

T1 - Simulation of silicon semiconductor devices by means of a direct Boltzmann-Poisson solver

AU - Ertler, Christian

AU - Schürrer, Ferdinand

PY - 2006

Y1 - 2006

M3 - Article

SN - 2054-5606

VL - 25

SP - 979

EP - 994

JO - COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering

JF - COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering

ER -