Simultaneous extraction of charge density dependent mobility and variable contact resistance from thin film transistors

Riccardo Di Pietro*, Deepak Venkateshvaran, Andreas Klug, Emil List-Kratochvil, Antonio Facchetti, Henning Sirringhaus, Dieter Neher

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and saturation regime of operation. The calculated values are validated against the ones obtained from direct experimental methods. This approach allows unambiguous determination of gate voltage dependent contact and channel resistance from the analysis of a single device. It solves the inconsistencies in the commonly accepted mobility extraction methods and provides additional possibilities for the analysis of the injection and transport processes in semiconducting materials.
Original languageEnglish
Article number193501
Number of pages5
JournalApplied Physics Letters
Volume104
DOIs
Publication statusPublished - 2014

Fields of Expertise

  • Advanced Materials Science

Treatment code (Nähere Zuordnung)

  • Basic - Fundamental (Grundlagenforschung)

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