Abstract
Typical DC-bus stabilization for low-voltage power circuits consists primarily of ceramic capacitors due to the capacity density and low equivalent series resistance (ESR) resulting in low conduction losses. Particularly in hard-switching and hard-commutation operation, the low ESR and high equivalent series inductance (ESL) of the capacitors in the commutation path restrict the damping of the switch node voltage overshoot and introduce high-frequency ringing, reducing the voltage margin of the transistor. Therefore, this paper analyzes the impact of the DC-bus impedance and proposes a DC-bus snubber based on an RC network to form the DC-bus impedance’s characteristic, which minimizes the overshoot voltage. A comprehensive simulation using measurement-derived component models is shown, which is verified by an in-situ measurement on a test PCB. Furthermore, transient measurements using a double pulse test setup show the effectiveness of the proposed approach.
Translated title of the contribution | Einfluss der Zwischenkreisimpedanz auf das Schaltverhalten von LV-Silizium-basierten MOSFETs |
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Original language | English |
Pages (from-to) | 82–94 |
Number of pages | 13 |
Journal | Elektrotechnik und Informationstechnik |
Volume | 140 |
Issue number | 1 |
DOIs | |
Publication status | Published - Feb 2023 |
Keywords
- Synchronous buck converter
- DC-bus impedance
- MOSFET switching performance
- DC- bus snubber
- Overvoltage damping
- Voltage margin
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Fields of Expertise
- Sustainable Systems