Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology

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Total ionizing dose effects on transistors, fabricated in 0.18 μm CMOS technology are investigated. Radiation induced changes in NMOS and PMOS transistors parameters are discussed. Radiation induced narrow channel effect (RINCE) is demonstrated. Degree of influence of the bias conditions on the radiation response of the transistors in the given CMOS process is shown. Finally, impact of the devices electrical characteristics change on radiation hard design as well as outlook of further investigation activities is discussed.
Original languageEnglish
Title of host publication2016 Asia-Pacific International Symposium on Electromagnetic Compatibility (APEMC)
PublisherIEEE Publications
Number of pages4
ISBN (Electronic)978-1-4673-9494-9
ISBN (Print)978-1-4673-8310-3
Publication statusPublished - 28 Jul 2016


  • Logic gates
  • MOS devices
  • Transistors
  • CMOS integrated circuits
  • ionizing dose effects
  • radiation hard design

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Radiation

Fields of Expertise

  • Information, Communication & Computing

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