Ultra-Low-Power IoT 30nW 474mV 19 ppm/°C Voltage Reference and 2 nA 470 ppm/°C Current Reference

Darshan Shetty; Christoph Steffan; Wolfgang Bösch; Jasmin Grosinger

doi:10.1109/ISCAS48785.2022.9937922

Ultra-Low-Power IoT 30nW 474mV 19 ppm/^°C Voltage Reference and 2 nA 470 ppm/^°C Current Reference

Darshan Shetty^*, Christoph Steffan, Wolfgang Bösch, Jasmin Grosinger

^*Corresponding author for this work

Institute of Microwave and Photonic Engineering (4510)

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › peer-review

Abstract

This paper proposes a high-precision sub-bandgap (sub-BGR) voltage reference (VR) and a temperature-compensated shared-resistive nanoampere current reference (CR) for ultra-low-power Internet of Things (IoT) devices. The CR is used to generate a bipolar junction transistor (BJT) complementary-to-absolute-temperature (CTAT) voltage, which is summed up with a proportional-to-absolute-temperature (PTAT) voltage generated using a summing network of CMOS-gate-coupled pairs. The proposed sub-BGR VR and CR are implemented in a 130 nm CMOS process. Post-layout simulations confirm the excellent performance of the second-order temperature-compensated VR across process corners with a mean temperature coefficient of 19 ppm/°C. The designed 474mV VR shows a line regulation of 0.1% N, with an overall power consumption of 30 nW.

Original language	English
Title of host publication	IEEE International Symposium on Circuits and Systems, ISCAS 2022
Publisher	Institute of Electrical and Electronics Engineers
Pages	843-847
Number of pages	5
ISBN (Electronic)	9781665484855
DOIs	https://doi.org/10.1109/ISCAS48785.2022.9937922
Publication status	Published - 2022
Event	2022 IEEE International Symposium on Circuits and Systems: ISCAS 2022 - Austin, United States Duration: 27 May 2022 → 1 Jun 2022

Conference

Conference	2022 IEEE International Symposium on Circuits and Systems
Abbreviated title	ISCAS 2022
Country/Territory	United States
City	Austin
Period	27/05/22 → 1/06/22

Keywords

current reference
high-precision
second-order compensation
sub-threshold CMOS design
temperature compensation
ultra-low power
voltage reference

ASJC Scopus subject areas

Electrical and Electronic Engineering

Fields of Expertise

Information, Communication & Computing

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/ISCAS48785.2022.9937922

Cite this

Ultra-Low-Power IoT 30nW 474mV 19 ppm/^°C Voltage Reference and 2 nA 470 ppm/^°C Current Reference. / Shetty, Darshan; Steffan, Christoph; Bösch, Wolfgang et al.
IEEE International Symposium on Circuits and Systems, ISCAS 2022. Institute of Electrical and Electronics Engineers, 2022. p. 843-847.

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › peer-review

Shetty, D, Steffan, C, Bösch, W & Grosinger, J 2022, Ultra-Low-Power IoT 30nW 474mV 19 ppm/^°C Voltage Reference and 2 nA 470 ppm/^°C Current Reference. in IEEE International Symposium on Circuits and Systems, ISCAS 2022. Institute of Electrical and Electronics Engineers, pp. 843-847, 2022 IEEE International Symposium on Circuits and Systems, Austin, Texas, United States, 27/05/22. https://doi.org/10.1109/ISCAS48785.2022.9937922

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title = "Ultra-Low-Power IoT 30nW 474mV 19 ppm/°C Voltage Reference and 2 nA 470 ppm/°C Current Reference",

abstract = "This paper proposes a high-precision sub-bandgap (sub-BGR) voltage reference (VR) and a temperature-compensated shared-resistive nanoampere current reference (CR) for ultra-low-power Internet of Things (IoT) devices. The CR is used to generate a bipolar junction transistor (BJT) complementary-to-absolute-temperature (CTAT) voltage, which is summed up with a proportional-to-absolute-temperature (PTAT) voltage generated using a summing network of CMOS-gate-coupled pairs. The proposed sub-BGR VR and CR are implemented in a 130 nm CMOS process. Post-layout simulations confirm the excellent performance of the second-order temperature-compensated VR across process corners with a mean temperature coefficient of 19 ppm/°C. The designed 474mV VR shows a line regulation of 0.1% N, with an overall power consumption of 30 nW.",

keywords = "current reference, high-precision, second-order compensation, sub-threshold CMOS design, temperature compensation, ultra-low power, voltage reference",

author = "Darshan Shetty and Christoph Steffan and Wolfgang B{\"o}sch and Jasmin Grosinger",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE International Symposium on Circuits and Systems : ISCAS 2022, ISCAS 2022 ; Conference date: 27-05-2022 Through 01-06-2022",

year = "2022",

doi = "10.1109/ISCAS48785.2022.9937922",

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AU - Shetty, Darshan

AU - Steffan, Christoph

AU - Bösch, Wolfgang

AU - Grosinger, Jasmin

PY - 2022

Y1 - 2022

N2 - This paper proposes a high-precision sub-bandgap (sub-BGR) voltage reference (VR) and a temperature-compensated shared-resistive nanoampere current reference (CR) for ultra-low-power Internet of Things (IoT) devices. The CR is used to generate a bipolar junction transistor (BJT) complementary-to-absolute-temperature (CTAT) voltage, which is summed up with a proportional-to-absolute-temperature (PTAT) voltage generated using a summing network of CMOS-gate-coupled pairs. The proposed sub-BGR VR and CR are implemented in a 130 nm CMOS process. Post-layout simulations confirm the excellent performance of the second-order temperature-compensated VR across process corners with a mean temperature coefficient of 19 ppm/°C. The designed 474mV VR shows a line regulation of 0.1% N, with an overall power consumption of 30 nW.

AB - This paper proposes a high-precision sub-bandgap (sub-BGR) voltage reference (VR) and a temperature-compensated shared-resistive nanoampere current reference (CR) for ultra-low-power Internet of Things (IoT) devices. The CR is used to generate a bipolar junction transistor (BJT) complementary-to-absolute-temperature (CTAT) voltage, which is summed up with a proportional-to-absolute-temperature (PTAT) voltage generated using a summing network of CMOS-gate-coupled pairs. The proposed sub-BGR VR and CR are implemented in a 130 nm CMOS process. Post-layout simulations confirm the excellent performance of the second-order temperature-compensated VR across process corners with a mean temperature coefficient of 19 ppm/°C. The designed 474mV VR shows a line regulation of 0.1% N, with an overall power consumption of 30 nW.

KW - current reference

KW - high-precision

KW - second-order compensation

KW - sub-threshold CMOS design

KW - temperature compensation

KW - ultra-low power

KW - voltage reference

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BT - IEEE International Symposium on Circuits and Systems, ISCAS 2022

PB - Institute of Electrical and Electronics Engineers

T2 - 2022 IEEE International Symposium on Circuits and Systems

Y2 - 27 May 2022 through 1 June 2022

ER -

Ultra-Low-Power IoT 30nW 474mV 19 ppm/^°C Voltage Reference and 2 nA 470 ppm/^°C Current Reference

Abstract

Conference

Keywords

ASJC Scopus subject areas

Fields of Expertise

UN SDGs

Access to Document

Other files and links

Fingerprint

Radio Frequency Identification (RFID) Technologies

Wireless Power Transmission for Sustainable Electronics (WIPE)

Cite this

Ultra-Low-Power IoT 30nW 474mV 19 ppm/°C Voltage Reference and 2 nA 470 ppm/°C Current Reference

Abstract

Conference

Keywords

ASJC Scopus subject areas

Fields of Expertise

UN SDGs

Access to Document

Other files and links

Fingerprint

Projects

Radio Frequency Identification (RFID) Technologies

Wireless Power Transmission for Sustainable Electronics (WIPE)

Cite this

Ultra-Low-Power IoT 30nW 474mV 19 ppm/^°C Voltage Reference and 2 nA 470 ppm/^°C Current Reference